B220A DSK | Alldatasheet
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1.5± 0.1 4.5± 0.1 2.6± 0.15 2.1± 0.2 1.3± 0.2 0.203MAX 0.2± 0.05 5.1± 0.2 FEA TURES M ECHANICAL DAT A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified B240A B 250A B 260A Maximum recurrent peak reverse voltage V RRM 40 50 60 V Max imum RMS v oltage V RWS 28 35 42 V Maximum DC blocking voltage V DC 40 50 60 V Maximum average forw ord rectified current at c T L (SE E FI G.1) I (AV) A Peak forw ard surge current 8.3ms single half- c sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 2.0A(NOTE.1) V F V Max imum DC r ev er s e c urr ent ( NOTE1) @T A =25 o C at rated DC blockjing voltage @T A =100 o C Operating junction and storage temperature range T STG o C Storage temperature range T J o C NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 High current capability,low forward voltage drop 0.5 I R Typical junction capacitance (NOTE2) o C/W B230A High temperature soldering guaranteed:250 o C/10 1 11 seconds at terminals B220A --- B260A )copper pad areas REVERSE VOLTAGE: 20 --- 60 V CURRENT: 2.0 A Built-in strain relief Case:JEDEC DO-214AC,molded plastic over 1111passivated chip Low power loss,high effciency Plastic package has Underwriters Laboratory
111 Flammability Classification 94V-0
50.0 2.0 DO - 214AC(SMA) Low profile package For surface mounted applications 14 21 20 30 Metal silicon junction, majority carrier conduction High surge capability For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications Guardring for overvoltage protection B220A Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram -65--- +150 0.5 0.7 20.0 Dimensions in millimeters BARRIER RECTIFIER S SURFACE MOUNT SCHOTTKY R JL 15.0 Diode Semiconductor Korea www.diode.kr
0.5 Resistive or inductive Load P.C.B.MOUNTED ON 0.2 X0.2 (5.0X5.0mm) COPPERPAD AREAS 1.0 60 70 80 90 100 110 120 130 140 150 160 B220A-B240A B250A-B260A 1.5 2.0 AT RATED T L 8.3ms Single Half Sine-Wave (JEDEC Method) 1 10 100 0.1 0.01 B220A-B240A B250A-B260A Puise Width=300 S 1%DUTY CYCLE T J =25 C T J =150 C T J =150 C O O O 100 0.1 0.001 0.01 200 4 06 08 0 1 0 0 B220A-B240A B250A-B260A T J =75 C T J =125 C T J =75 C 1 10 100 400 100 0.1 B220A-B240A B250A-B260A O T J =25 C f=1.0MHz Vsig=50mVp-p AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.2-- PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, REVERSE VOLTAGE,VOLTS LEAD TEMPERATURE JUNCTION CAPACITANCE, pF B220A --- B260A FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE www.diode.kr Diode Semiconductor Korea