B2020WS

B2020WS HDSEMI | Alldatasheet

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Technical content

Features

H igh Diode Semiconductor SOD3 23

Applications

Electrical Characteristics (T =25℃ Unless otherwise specified）a Schottky Rectifier B2020WS Low Forward Voltage Drop Very Small SMD Package Low Voltage Rectification High Efficiency DC/DC Conversion Switch Mode Power Supply Inverse Polarity Protection Low Power Consumption Applications Symbol Para meter Value Unit V RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage 20 V V R(RMS) RMS Reverse Voltage 14 V I F Continuous Forward Current 2 A I FSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 9 A 250 P D P o w er D i s s i p a t i o n N o t e 1 N o t e 2 480 mW Thermal Resistance from Junction to Ambient Note1 400 R ΘJA Note2 208 ℃/W T j Junction Temperature 125 ℃ T stg Storage Temperature -55~+150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Reverse breakdown voltage V (BR) I R =1mA 20 V V R =10V 80 Reverse current I R V R =20V 100 μA I F =1A 0.45 Forward voltage V F I F =2A 0.55 V Total capacitance C tot V R =4V,f=1MHz 120 pF *Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 100 150 200 250 300 0 25 50 75 100 125 100 150 200 250 300 0 100 200 300 400 500 600 0.01 0.1 0 5 10 15 20 25 30 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a =100 o C T a =25 o C FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (mV) Reverse Characteristics T a =100 o C T a =25 o C REVERSE CURRENT I R (mA) REVERSE VOLTAGE V R (V)

H igh Diode Semiconductor Package Outline Dimensions SOD323 Suggested Pad Layout SOD323

Reel Taping Specifications For Surface Mount Devices-SOD323 H igh Diode Semiconductor 1.25 1.46 2.9