B170_1 DIODES | Alldatasheet
Document overview
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Technical content
Features
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
- Guard Ring Die Construction for Transient Protection
- Ideally Suited for Automatic Assembly
- Low Power Loss, High Efficiency
- Surge Overload Rating to 30A Peak
- For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application
- High Temperature Soldering: 260°C/10 Second at Terminal
- Lead Free Finish/RoHS Compliant (Note 3) Mechanical Data
- Case: SMA / SMB
- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020C
- Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208
- Polarity: Cathode Band or Cathode Notch
- Marking: Type Number
- SMA Weight: 0.064 grams (approximate)
- SMB Weight: 0.093 grams (approximate) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. A B C D GH E J Characteristic Symbol B170/B B180/B B190/B B1100/B Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectified Output Current @ TT = 125°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 30 A Forward Voltage @ IF = 1.0A @ TA = 25°C @ TA = 100°C VFM 0.79 0.69 V Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 100°C IRM 0.5 5.0 mA Typical Total Capacitance (Note 2) CT 80 pF Typical Thermal Resistance Junction to Terminal (Note 1) RqJT 25 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. No Suffix Designates SMA Package “B” Suffix Designates SMB Package Dim SMA SMB Min Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.01 2.30 2.00 2.40 All Dimensions in mm
DS30018 Rev. 6 - 2 2 of 3 B170/B - B1100/B www.diodes.com 0.01 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V)F Fig. 2 Typical Forward Characteristics 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current Single Half Sine-Wave T = 150°Cj 100 1000 0.1 1 10 100 C , TOTAL CAPACITANCE (pF)T V , REVERSE VOLTAGE (V)R Fig. 4 Typical Total Capacitance T = 25°Cj f = 1.0MHz 0.5 1.0 25 50 75 100 125 150 I AVERAGE FORWARD CURRENT (A)(AV), T , TERMINAL TEMPERATURE (°C)T Fig. 1 Forward Current Derating Curve XXX = Product type marking code, ex: B170 (SMA package) XXXX = Product type marking code, ex: B190B (SMB package) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 YWW XXX(X) Marking Information * x = Device type, e.g. B180-13-F (SMA package); B1100B-13-F (SMB package). Device* Packaging Shipping B1x-13-F B1xB-13-F SMA SMB 5000/Tape & Reel 3000/Tape & Reel Ordering Information (Note 4)
DS30018 Rev. 6 - 2 3 of 3 B170/B - B1100/B www.diodes.com IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.