B1721 NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
σʔλɾγʔτ γϦίϯɾύϫʔɾτϥϯδελ Silicon Power Transistors 2SB1721 PNPγϦίϯɾτϥϯδελ εΠονϯά༻ ߸D16287JJ2V0DS00 ʢୈ2 ൛ʣ ݄July 2006 NS CP(K) 2002 2SB1721 ɼIC ͷग़ྗ͔ΒυϥΠϒͰ͖ΔγϦίϯɾύϫʔɾ τϥϯδελͰ͢ɻOAɼFAͷϞʔλɾυϥΠόɼιϨϊΠυɾ దͰ͢ɻ ಛ çç ˓ ͍ɻ ç hFE ʾç100ʢVCE = –5.0 V, IC = –0.5 Aʣ ʢTA = 25°Cʣ ç ߸ ݅ ֨ ୯Ґ ίϨΫλ - ిѹ VCBO –60 V ίϨΫλ - ిѹ VCEO –60 V Τϛολ - ిѹ VEBO –7.0 V ίϨΫλిྲྀʢύϧεʣ IC(pulse) PW ʽ 10 ms, Duty Cycle ʽ 50% –6.0 A ࣦPT T C = 25°C 20 W T A = 25°C 1.0 W δϟϯΫγϣϯԹ Tj 150 °C อଘԹ Tstg –55ʙ+150 °C Φʔμใ Φʔμ໊শ ύοέʔδ 2SB1721 TO-251ʢMP-3ʣ 2SB1721-Z TO-252ʢMP-3Zʣ (TO-251) (TO-252)
σʔλɾγʔτç D16287JJ2V0DS 2 తಛੑʢTA = 25°Cʣ ç ߸ ݅MIN. TYP. MAX. ୯Ґ ίϨΫλ͠Όஅిྲྀ ICBO V CB = −60 V, IE = 0 A −10 μA hFE2 V CE = −5.0 V, IC = −3 A 20 − ίϨΫλిѹ VCE(sat) I C = −3.0 A, IB = −300 mA −1.0 V ϕʔεిѹ VBE(sat) I C = −3.0 A, IB = −300 mA −2.0 V རಘଳҬ෯ੵ fT V CE = −5.0 V, IC = −0.5 A 5 MHz ίϨΫλ༰ྔ Cob V CB = −10 V, IE = 0 A, f = 1.0 MHz 80 pF ؒ࣌ton I C = −2.0 A, RL = 15 Ω, 0.4 μs ؒ࣌tstg IB1 = –IB2 = −200 mA, VCC ˺ –30 V 1.7 μs ؒ࣌߱tf ଌఆճ࿏ਤর 0.5 μs ç ύϧεଌఆçPW ʽ 350 μs, Duty Cycle ʽ 2% ʢtonɼtstgɼtfʣଌఆճ࿏ IC VIN PW PW ˺ 50 sμ Duty Cycle ʽ 2% ܗ ܗ ton tstg tf 90% IB1 IB2 10% VCC RL IB1 IB2 IC T.U.T. VBB ˺ 5.0 V
σʔλɾγʔτç D16287JJ2V0DS 3 ઢʢTA = 25°Cʣ TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING CURVE OF SAFE OPERATING AREA PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 T C - Case Temperature - °C dT - IC Derating Factor - % 100 120 0 25 50 75 100 125 150 175 S/b Limited Dissipation Limited T C - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - A - 0.01 - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 IC(pulse) = −6 A IC(DC) = −3 A PW = 1 ms 10 ms Power Dissipation Limited TA = 25 °C Sin gle pulse DC V CE - Collector to Emitter Voltage - V I C - Collector Current - A - 1 - 2 - 3 - 4 - 5 0 - 2- 4- 6- 8 IB = −100 mA −80 mA −40 mA −60 mA −20 mA VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT hFE - DC Current Gain 100 1000 VCE = −5.0 V Pulsed TA = 150 °C 75 °C 25 °C −25 °C −50 °C IC - Collector Current - A VCE(sat) - Collector Saturation Voltage - V - 0.001 - 0.01 - 0.1 - 1 - 10 TA = 150 °C 75 °C 25 °C ◊ 25 °C ◊ 50 °C IC /IB = 10 A I C - Collector Current - A
σʔλɾγʔτç D16287JJ2V0DS 4 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.1 100 1000 Rth(j-A) = 125°C/W Rth(j-C) = 6.25°C/W Single pulse PW - Pulse Width - s BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V - 0.01 - 0.1 - 1 - 10 TA = 50 °C 25 °C 25 °C 75°C 150 °C IC/IB = 10 A IC - Collector Current - A ft - Gain Band Width Product - MHz 0.1 100 VCE = −5.0 V I C - Collector Current - A OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE SWITCHING CHARACTERISTICS Cob - Output Capacitance - pF 100 1000 f = 1.0 MHz VCB - Collector to Base Voltage - V ton -Turn-On Time - μs tstg - Storage Time - μs tf - Fall Time - μs 0.1 - 0.1 - 1 - 10 - 100 tstg ton tfton tf ton IC = 10•IB1 = −10•IB2 IC - Collector Current - A 100 μ 1 m 10 m 100 m 1 10 100 1000
σʔλɾγʔτç D16287JJ2V0DS 5 ਤʢ୯Ґɿmmʣ 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 213 6.5 ±0.2 5.0 ±0.2 1.5 −0.1 +0.2 5.5 ±0.27.0 MIN. 13.7 MIN. 2.32.3 0.75 0.5 ±0.1 2.3 ±0.2 1.6 ±0.2 1.1 ±0.2 0.5 −0.1 +0.2 0.5 −0.1 +0.2 123 6.5 ±0.2 4.4 ±0.2 5.0 ±0.2 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 2.3 ±0.3 5.6 ±0.3 9.5 ±0.5 2.5 ±0.5 1.0 ±0.5 5.5 ±0.2 1.5 −0.1 +0.22.3 ±0.2 0.5 ±0.1 0.4 MIN. 0.5 TYP. 0.15 ±0.15 1. ϕʔε 2. ίϨΫλ 3. Τϛολ 4. ίϨΫλʢϑΟϯʣ 1. ϕʔε 2. ίϨΫλ 3. Τϛολ 4. ίϨΫλʢϑΟϯʣ
র͍ͩ͘͞ɻ ͠ɼҰ ࡒ ɼ ྫɼԠ༻ྫΛ ɹ શʹൃੜ͠ͳ͍͜ ఆ ΘΕ ɹɹඪ४ਫ४ɿίϯϐϡʔλɼOAɼAVػ ༻ϩϘοτ छ҆શஔɼ ثػ ػ ɼඪ४ਫ४ લ ʢʣ ʯͱɼNEC͓ΑͼNECΤϨΫ Λ͍͏ɻ ͷ։ൃɼ Λ͍͏ɻ M8Eɹ02.11 ʳ ઌʳ C04.2T ಋମϗοτϥΠϯ ʙʣ Θͤઌ ిɹ ɿ 044-435-9494 E-mailɿ info@necel.com Լপ෦ ʲϗʔϜϖʔδʳ ɹ63-ʢΞυϨεʣɹɹhttp://www.necel.co.jp/ Θͤઌʳ