B16WS GWSEMI | Alldatasheet
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Technical content
Plastic-Encapsulate Diodes Sc h o t t k y Ba r r i e r D i o d e FEA TURES z Guard ring protection z Low forward voltage drop z For use in low voltage, high frequency inverters z High surge current capability Marking: SM MAXIMUM RATINGS( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Maximum recurrent peak reverse voltage 60 VRMS Maximum RMS voltage 42 VDC Maximum DC blocking voltage 60 V IF Continuous forward current 1 IFSM Non-repetitive Peak forward surge current@t=8.3ms 10 A Ptot Total power dissipation 250 mW RθJA Thermal resistance junction to ambient air 400 ℃/W TJ Junction temperature 125 ℃ Tstg storage temperature -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Maximum instantaneous forward voltage VF I F=1A 0.7 V Maximum DC reverse current at rated DC blocking voltage IR V R=60V 0.1 mA Total capacitance Ctot V R=4V,f=1MHz 120 pF PIN DESCRI TION P Cathod1 e Anode2 SM PINNING 1 2 Top View Marking Code: "SM" Simplified outline SOD-323 and symbol 16WSB
0.1 100 1000 5 1 01 52 02 53 03 54 04 55 05 56 0 0.1 100 1000 10000 0 25 50 75 100 125 100 150 200 250 300 02 468 1 0 100 150 650 0.1 Forward Characteristics FORWARD VOLTAGE VF (mV) FORWARD CURRENT IF (mA) Ta =25℃ Ta =100℃ Reverse Characteristics Ta=25℃ Ta=100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Typical Characteristics 16WSB
Plastic surface mounted package; 2 leads SOD-323 PACKAGE OUTLINE