B16NK60Z

STP16NK60Z_05 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

STP16NK65Z - STB16NK65Z-S - STW16NK60Z Table 3: Absolute Maximum ratings /circle6 ) Pulse width limited by safe operating area (1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data Table 5: Avalanche Characteristics Table 6: GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at T C = 25°C 14 A ID Drain Current (continuous) at T C = 100°C 8.8 A IDM (/circle6 ) Drain Current (pulsed) 56 A PTOT Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 6000 V TO-220/ I²SPAK TO-247 Rthj-case Thermal Resistance Junction-case Max 0.66 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 Tl Maximum Lead Temperature For Soldering Purpose 300 Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 14 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 360 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

STP16NK60Z - STB16NK60Z-S - STW16NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7 A 0.38 0.42 Ω V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 7 A 12 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2650 285 pF pF pF Coss eq. (*) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 158 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 480 V, ID = 14 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 14 A, VGS = 10V nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 490 5.4 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 585 ns µC A ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A

STP16NK60Z - STB16NK60Z-S - STW16NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:

STP16NK65Z - STB16NK65Z-S - STW16NK60Z DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA

STP16NK60Z - STB16NK60Z-S - STW16NK60Z DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP16NK65Z - STB16NK65Z-S - STW16NK60Z DIM. mm. inch A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.018 0.024 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.394 0.409 G 4.88 5.28 0.192 0.208 L 16.7 17.5 0.657 0.689 L2 1.27 1.4 0.05 0.055 L3 13.82 14.42 0.544 0.568 I2SPAK MECHANICAL DATA

STP16NK60Z - STB16NK60Z-S - STW16NK60Z Table 10: Revision History Date Revision Description of Changes 06-Jul-2004 1 First Release. 06-Sep-2005 2 Inserted Ecopak indication

STP16NK65Z - STB16NK65Z-S - STW16NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America