2SB1649 SANKEN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
*hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) Darlington 2SB1649 IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta DeratingSafe Operating Area (Single Pulse) θj-a–t Characteristics fT –IE Characteristics (Typical) Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) IC =–10A IC =–15A IC =–5A –15 –10 0– 3 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (CaseT emp) –30˚C (CaseT emp) Collector Current IC (A) DC Current Gain h FE (VCE =–4V) 1,000 10,000 50,000 5,000 Typ (VCE =–4V) 1000 5000 10000 50000 Collector Current IC (A) DC Current Gain h FE 25˚C –30˚C 125˚C Time t(ms) 0.1 0.5 1 10 100 1000 2000 Transient Thermal Resistance θj-a(˚C/W) 0.02 0.10.05 0.5 1 5 10 60Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) 100 3.5 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 0 25 50 75 100 125 150 –10mA –50mA –3mA –10 –15 –2 –6 –4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) –1.5mA –1.0mA –0.8mA IB =–0.3mA –0.5mA –2mA –0.05 –0.5 –0.1 –10 –50 DC 100ms 10ms Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings –150 –150 –15 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Ratings –100max –100max –150min 5000min* –2.5max –3.0max 45typ 320typ Unit mA mA V V V MHz pF Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω ) IC (A) –10 VBB2 (V) IB2 (mA) ton (ms) 0.7typ tstg (ms) 1.6typ tf (ms) 1.1typ IB1 (mA) –10 VBB1 (V) –10 External Dimensions FM100(TO3PF) 4.41.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.6 3.3 1.75 0.8±0.2 2.15 1.05+0.2 -0.1 5.45±0.1 23.0±0.316.2 9.5±0.2 5.5 15.6±0.2 5.5±0.2 3.45 3.350.65+0.2 -0.1 ±0.2 3.0 0.8 a b Weight : Approx 6.5g a. Part No. b. Lot No. B E C (70Ω ) Equivalent circuit