2SB1642 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm wloto3 | g32402 27802 e _ Low Collector Saturation Voltage | 2] <0) > Vo (sat)= —1.5V (Max.) (I¢= —2.5A, Ip = —0.25A) 4 Ea 2) 3 e@ Collector Power Dissipation : Po =25W(Te=25°C) 2 rT | a © Collector Metal (Fin) is Fully Covered with Mold Resin wT. I 4 z| | MAXIMUM RATINGS (Ta = 25°C) vad | } Ei | CHARACTERISTIC SYMBOL UNIT || , ccso2s yeatons Collector-Base Voltage Vepo [| -60 | V_ | ” 2 Collector: Emitter Voltage Vono 1-60 |v] | ee Enitier-Base Voltage VEBO spot ie Collector Power Ta=25°C P w 3. EMITTER Dissipation Te=25°0 | © JEDEC = IAT S087 Storage Temperature Range —B5~150 TOSHIBA” DioRiA ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. [max.[unzr] Collector Cut-off Current Topo |Vop=—60V, In=0 L— L— [10], 7A] Emitter Cut-off Current | Igpo _|VEB=~=TV, 1o=0 SS S0074 Collector-Emitter Breakdown Voltage (BR) CEO|IC= ~10mA, TB=0 | -»| - | - | ¥ | bre @)_[Vou==8V, Ig==05A | To0| — [320] DO Carrent Gain bp @__[VoR=—5V, Io=—3A | 20[ = [= | Collector-Emitter SEEN, | seemafer-tanie-eawn | — [vo Base-EEmitter Voltage Vop=—5V, 1g=—05A__ | — _-075|-10| V_ Von==5V.Ig=—0.5A [=| 9} — [ae | Collector Output Capacitance Vop=-10V, Ig=0, f=1MHz | — [| 50[ — | pF | @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-07-21 1/2
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