2SB1625 SANKEN | Alldatasheet
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*hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating –2 –6 –4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) IB =–0.1mA –5mA –1mA–0.5mA –0.4mA –0.3mA –0.2mA Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) –5A IC =–3A 0– 3 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) Collector Current IC (A) DC Current Gain h FE (VCE =–4V) 500 200 10,000 40,000 1,000 5,000 Typ (VCE =–4V) 100 5000 10000 500 1000 50000 Collector Current IC (A) DC Current Gain h FE 25˚C –30˚C 125˚C 0.5 1 10 100 1000 2000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0.02 0.10.05 0.5 1 5 6 100 120 80Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) Typ Collector-Emitter Voltage VCE (V) Collector Current IC (A) –0.1 –0.05 –0.5 –10 –20 –5 10ms DC 100ms Without Heatsink Natural Cooling 3.5 005 0 25 75 125 100 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink Safe Operating Area (Single Pulse) θj-a–t Characteristics fT –IE Characteristics (Typical) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SB1625 –110 –110 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SB1625 –100max –100max –110min 5000min* –2.5max –3.0max –100typ –110typ Unit mA mA V V V MHz pF Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 1.1typ tstg (ms) 3.2typ tf (ms) 1.1typ IB1 (mA) VBB1 (V) –10 B E C (70Ω ) Equivalent circuit External Dimensions FM100(TO3P) 4.41.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.6 3.3 1.75 0.8±0.2 2.15 1.05+0.2 -0.1 5.45±0.1 23.0±0.316.2 9.5±0.2 5.5 15.6±0.2 5.5±0.2 3.45 3.350.65+0.2 -0.1 ±0.2 3.0 0.8 a b Weight : Approx 6.5g a. Type No. b. Lot No. Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2494)