2SB1560 SANKEN | Alldatasheet
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*hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) Darlington 2SB1560 IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating –10 –2 –4 –6 Collector-Emitter Voltage VCE (V) Collector Current IC (A) –10mA –2.5mA–2.0mA –1.5mA –1.0mA –1.2mA –0.8mA –0.6mA IB =–0.4mA Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) –7A –10A IC =–5A –10 0 –2.5 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) 1,000 10,000 40,000 5,000 Collector Current IC (A) DC Current Gain h FE (VCE =–4V) Typ (VCE =–4V) 500 1000 5000 10000 50000 Collector Current IC (A) DC Current Gain h FE 125˚C 25˚C –30˚C 0.1 0.5 1 5 10 50 100 500 1000 2000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0.02 0.10.05 0.5 1 5 10 100 80Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) Typ 10ms –0.05 –0.1 –0.5 –10 –30 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC 100ms Without Heatsink Natural Cooling 100 3.5 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink Safe Operating Area (Single Pulse) θj-a–t Characteristics fT –IE Characteristics (Typical) Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings –160 –150 –10 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr C OB Ratings –100max –100max –150min 5000min* –2.5max –3.0max 50typ 230typ Unit mA mA V V V MHz pF Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –70 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 0.8typ tstg (ms) 3.0typ tf (ms) 1.2typ IB1 (mA) VBB1 (V) –10 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 19.9±0.3 4.0 2.0 5.0±0.2 1.8 ø3.2±0.1 1.05+0.2 -0.1 20.0min 4.0max BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65+0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Part No. b. Lot No. B E C (70Ω ) Equivalent circuit