B120B DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified B140B B150B B160B B120B OOHB130BO O IB140BOOOIB150B B160B Maximum recurrent peak reverse voltage V RRM 40 50 60 V Max imum RMS v oltage V RWS 28 35 42 V Maximum DC blocking voltage V DC 40 50 60 V Maximum average forw ord rectified current at x T L (SE E FI G.1) I (AV) A Peak forw ard surge current 8.3ms single half- x sine-w ave superimposed on rated load(JEDEC x Method) I FSM A Maximum instantaneous forw ard voltage at x 1.0A(NOTE.1) V F V M axim um DC reverse current (NOTE .1) x @T A =25 o C at rated DC blockjing voltage @T A =100 o C R θ JA R θ JL Storage temperature range Operating junction x and storage temperature range T j o C Storage temperature range T STG o C 0.5 88.0 B130B 0.5 0.7 20.0 I R NOTE: 1.Pulse test:300 μS pulse width,1%duty cy cle Typical thermal resitance (NOTE. 2) o C/W mA - 55 --- +125 - 55 --- +150 10.0 B120 B- - - B160B )copper pad areas REVERSE VOLTAGE: 20 --- 60 V CURRENT: 1.0 A ◇ Built-in strain relief ◇ Case:JEDEC SMB,molded plastic over 1111passivated chip Dev ice marking code SCHOTT KY BARRIER RECTIFIERS ◇ Low power loss,high effciency ◇ Plastic package has Underwriters Laboratory
111 Flammability Classification 94V-0
◇ High temperature soldering guaranteed:250 o C/10 111 seconds at terminals B120B ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.003 ounces, 0.093 gram ◇ Terminals:Solder plated, solderable per MIL-STD-750, 1111Method 2026 30.0 1.0 UNITS 14 21 ◇ Guardring for overvoltage protection SMB ◇ Low profile package ◇ For surface mounted applications ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
50 60 70 80 90 100 110 120 130 140 150 160 170 1.0 0.5 P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS Resistive or inductive Load 11 01 0 0 T L =100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O TJ=25 C O Puise Width=300 S 1%DUTY CYCLE TJ=125 C O TJ=100 C O B120B-B140B B150B-B160B 0.01 0.1 1.6 B120B-B140B B150B-B160B 100 0.001 0.01 0.1 200 4 06 08 0 1 0 0 T J =125 C T J =75 C T J =25 C 1 10 100 400 100 0.1 TJ=25 C f=1.0MHz Vsig=50mVp-p B120B-B140B B150B-B160B AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,％ REVERSE VOLTAGE,VOLTS FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF LEAD T EMPERAT URE ℃ B120B - - - B160B FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT www.diode.kr Diode Semiconductor Korea