B1412

2SB1412 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 5 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R209-021,A HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ FEATURES *Excellent DC current gain characteristics *Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) TO-252 *Pb-free plating product number:2SB1412L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SB1412-TN3-F-R 2SB1412L-TN3-F-R TO-252 B C E Tape Reel 2SB1412L-TN3-F-R (1)Packing Type (3)Package Type (4)Lead Plating (2)Pin Assignment (1) R: Tape Reel (2) refer to Pin Assignment (3) TN3: TO-252 (4) L: Lead Free Plating, Blank: Pb/Sn

2SB1412 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 2 0 9 - 0 2 1 , A „ ABSOLUTE MAXIMUM RATING (Ta=25 °C , unless otherwise specified) PARAMETER SYMBOL LIMITS UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -6 V Collector Current(DC) I C -5 A Collector Current(PULSE) Single pulse, Pw=10ms I CP -10 A Collector Power Dissipation P D 1 W Collector Power Dissipation (note2) P D 10(TC=25°C) W Junction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.When mounted on a 40*40*0.7mm ceramic board. „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Base Breakdown Voltage BV CBO IC= -50DŽA -30 V Collector Emitter Breakdown Voltage BV CEO IC= -1mA -20 V Emitter Base Breakdown Voltage BV EBO IE= -50DŽA -6 V Collector Cut-Off Current I CBO V CB= -20V -0.5 DŽA Emitter Cut-Off Current I EBO V EB= -5V -0.5 DŽA DC Current Transfer Ratio h FE V CE= -2V,Ic= -0.5A 82 390 Collector-Emitter Saturation Voltage V CE(SAT) IC/IB= -4A/-0.1A -1.0 V Transition Frequency f T V CE= -6V, IE= 50 mA, f=30MHz 120 MHz Output Capacitance Cob V CB= -20V, IE= 0 A, f=1MHz 60 pF „ CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390

2SB1412 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 2 0 9 - 0 2 1 , A „ TYPICAL CHARACTERISTICS 0 -0.2 -1m Base to Emitter Voltage:VBE(V) Grounded Emitter Propagation Characteristics Collector Current: Ic(mA) 200 Collector Current : Ic(A) DC Current Gain vs.Collector Current (I) DC Current Gain: hFE 100 -2m -5m Collector to Emitter Voltage:VCE(V) Grounded Emitter Output Characteristics Collector Current: Ic(A)-1 IB =0mA Ta=25Ċ -10mA -5mA 500 Collector-emitter Saturation Voltage vs.Collector Current (I) Collector Saturation Voltage:VCE(SAT) ( V) -10m -30mA -45mA -50mA -15mA -20mA -25mA -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 Collector Current : Ic(A) -20m -50m -100m -200m -500m -10 VCE = -2V Ta=25Ċ Ta=100Ċ Ta= -25Ċ -40mA -35mA -5 -10 VcE= -5V VcE= -2V VcE= -1V Ta=25Ċ 200 Collector Current : Ic(A) DC Current Gain vs.Collector Current(II) DC Current Gain: hFE 100 500 -2 -5 -10 VcE= -1V Ta=100Ċ 200 Collector Current : Ic(A) DC Current Gain vs.Collector Current (III) DC Current Gain: hFE 100 500 -2 -5 -10 VcE= -2V Ta=25Ċ Ta=25Ċ Ta= -25Ċ Ta=100Ċ Ta= -25Ċ -5 Ta=25Ċ Ic/IB=50/1

2SB1412 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 2 0 9 - 0 2 1 , A „ TYPICAL CHARACTERISTICS(Cont.) Collector Output Capacitance vs.Collector-Base Voltage Collector Output Capacitance :Cob (pF) 100 Collector to Base Voltage:VCB (V) 200 500 12 5 10 20 Emitter Current : IE(mA) Gain Bandwidth Product vs.Emitter Current Transetion Frequency :fT (MHz) 50 100 500 100 1000 200 500 1000 Collector-emitter Saturation Voltage vs.Collector Current (II) Collector Saturation Voltage:VCE(SAT) ( V) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 Collector Current : Ic(A) Ta=100Ċ Ic/IB=10 Collector-emitter Saturation Voltage vs.Collector Current (III) Collector Saturation Voltage:VCE(SAT) ( V) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 Collector Current : Ic(A) Ta= -25Ċ Ta=25Ċ Ic/IB=30 Ta=100Ċ Ta= -25Ċ Ta=25Ċ Collector-emitter Saturation Voltage vs.Collector Current (IV) Collector Saturation Voltage:VCE(SAT) ( V) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 Collector Current : Ic(A) Ta=100Ċ Ic/IB=40 Collector-emitter Saturation Voltage vs.Collector Current (V) Collector Saturation Voltage:VCE(SAT) ( V)-0.2 -0.05 -0.1 -0.5 -0.02 -0.01 Collector Current : Ic(A) Ta= -25Ċ Ta=25Ċ Ic/IB=50 Ta=100Ċ Ta= -25Ċ Ta=25Ċ 200 1000 VcE= -6V Ta=25Ċ Ta=25Ċ f =1MHz IE=0A -50

2SB1412 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 2 0 9 - 0 2 1 , A „ TYPICAL CHARACTERISTICS(Cont.) 1000 -0.1 Emitter To Base Voltage : VEB(V) Emitter Input Capacitance vs.Emitter- Base Voltage Emitter Input Capacitance:Cib (pF) -0.2 -0.5 -2 -5-1 100 200 -10 500 Ic=0A Ta=25Ċ f=1MHz UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.