2SB1412 SECOS | Alldatasheet

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0.2 0.2 0.1 6.6 5.3 0.25.6 0.27.00.32.5 0.21.0 0.10.8 0.7 2.3 0.10.6 1.5Max 0.31.2 0.10.5 0.12.30.2 0.1 0.3 0.1 0.1 !!!! A b so lu te max i m u m r a t i ng s ( T a=25 ° C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. Parameter VCBO VCEO VEBO PC Tj Tstg V V V A(DC) ° C C − 20 IC A(Pulse)− 10 ∗1 0.5 W W W(TC=25° C) 2SB1386 2SB1412 2SB1326 150 55~+ 150 Symbol Limits Unit !!!! El ec tr ica l cha r act e r is ti cs ( T a= 25 ° C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance ∗Measured using pulse current. Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 2SB1386,2SB1412 2SB1326 − ∗ 120 0.5 0.5 390 1.0 V IC=− 50 µ A IC=− 1mA IE=− 50 µ A VCB=− 20V VEB=− 5V VCE=− 2V, IC=− 0.5A IC/IB=− 4A/ − 0.1A VCE=− 6V, IE= 50mA, f = 30MHz VCB=− 20V, IE= 0A, f = 1MHz V V µ A µ A 120 390 V MHz pF Typ. Max. Unit Conditions Transition frequency !!!! P a ck ag i n g s p ec if ic at i o n s a nd hFE Package Code Taping Basic ordering unit (pieces) T100 TL 1000 2500 PQR hFE 2SB1386 TV2 2500 PQR 2SB1412 QR 2SB1326 Type 1)Low VCE (sat). 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 D-Pack 01 -Jun-2002 Rev. A Page 1 of 3

Any changing of specification will not be informed individual 2SB1412 PNP Silicon Low Frequency Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente !! !!Electrical characteristic curves Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) -1m -2m -5m -10m -20m -200m -100m -50m -500m -10 -5 VCE=−2V 25°C −25°C Ta=100°C Fig.2 Grounded emitter output characteristics COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) IB=0A −20mA −25mA −30mA −10mA −5mA −15mA Ta=25°C−50mA −45mA −40mA −35mA Fig.3 DC current gain vs. collector current (Ι) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) Ta=25°C −2V VCE=−5V −1V 100 200 500 Fig.4 DC current gain vs. collector current (ΙΙ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) VCE=−1V 100 200 500 25°C −25°C Ta=100°C Fig.5 DC current gain vs. collector current (ΙΙΙ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 100 200 500 25°C −25°C Ta=100°C VCE=−2V Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) IC/IB=50/1 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -0.01 -0.5 -0.2 -0.1 -0.05 -0.02 Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) Ta=100°C 25°C lC/lB=10 −25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -0.01 -0.5 -0.2 -0.1 -0.05 -0.02 Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ) Ta=100°C −25°C 25°C lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -0.01 -0.5 -0.2 -0.1 -0.05 -0.02 Fig.9 Collector-emitter saturation voltage vs. collector current (IV) Ta=100°C −25°C 25°C lC/lB=40 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -0.01 -0.5 -0.2 -0.1 -0.05 -0.02 01 -Jun-2002 Rev. A Page 2 of 3

Any changing of specification will not be informed individual 2SB1412 PNP Silicon Low Frequency Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -0.01 -0.5 -0.2 -0.1 -0.05 -0.02 − 25° C 25° C Ta = 100° C lC/lB=50 Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current EMITTER CURRENT : IE (mA) TRANSEITION FREQUENCY : fT (MHz) 1 2 5 10 50 100 200 500 20 100 200 500 1 000 1000 Ta = 25 ° C VCE=−6V Fig.12 Collector output capacitance vs. collector-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) -0.1 -0.2 -0.5 -10 -20 -50 1000 500 200 100 Ta = 25 ° C f 1MHz IE= 0A Fig.13 Emitter input capacitance vs. emitter-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) EMITTER TO BASE VOLTAGE : VEB (V) 100 200 500 1000 -0.1 -0.2 -0.5 -10 Ta = 25 ° C f 1MHz IC= 0A COLLECTOR TO EMITTER VOLTAGE : − VCE (V) COLLECTOR CURRENT : IC (A) 0.2 0.5 1 2 5 10 20 50 100 500 200 200m 100m 50m 20m 10m 500m 100 Fig.14 Safe operation area (2SB1412) DC Ta = 25 ° C Single nonrepetitive pulse Pw =10ms Pw 100ms 01 -Jun-2002 Rev. A Page 3 of 3