DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
-3A , -60V PNP Plastic Encapsulated Transistor 25-Jun-2013 Rev. B Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification. Wide ASO (Adoption of MBIT Process) Low Saturation Voltage. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO -60 V Collector to Emitter Voltage V CEO -60 V Emitter to Base Voltage V EBO -6 V Collector Current - Continuous I C -3 A Collector Power Dissipation P C 2 W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V (BR)CBO -60 - - V I C= -1mA, IE=0 Collector to Emitter Breakdown Voltage V (BR)CEO -60 - - V I C= -5mA, IB=0 Emitter to Base Breakdown Voltage V (BR)EBO -6 - - V I E= -1mA, IC=0 Collector Cut-Off Current I CBO - - -0.1 μA V CB= -40V, IE=0 Emitter Cut-Off Current I EBO - - -0.1 μA V EB= -4V, IC=0 100 - 200 V CE= -5V, IC= -500mA DC Current Gain h FE 20 - - V CE= -5V, IC= -3A Collector to Emitter Saturation Voltage V CE(sat) - - -1 V I C= -2A, IB= -200mA Base to Emitter Saturation Voltage V BE(sat) - - -1 V V CE= -5V, IC= -500mA Transition Frequency f T - 100 - MHz V CE= -5V, IC= -500mA Collector output capacitance C ob - 60 - pF V CB= -10V, IE=0, f=1MHz TO-220J