B40C800DM VISHAY | Alldatasheet
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Vishay General Semiconductor B40C800DM thru B380C800DM Document Number 88533 09-Oct-06 www.vishay.com Glass Passivated Ultrafast Bridge Rectifier
FEATURES
- UL Recognition, file number E54214 Ideal for automated placement High surge current capability Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, Lighting Ballaster, Adapter, Battery Charger, Home Appliances, Office Equipment, and Telecommunication applications. MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked on body Case Style DFM MAJOR RATINGS AND CHARACTERISTICS IF(AV) 0.9 A VRRM 65 V to 600 V IFSM 45 A IR 10 µA VF 1.0 V Tj max. 125 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT Maximum repetitive peak reverse voltage V RRM 65 125 200 400 600 V Maximum RMS input voltage R + C-load V RMS 40 80 125 250 380 V Maximum average forward output current for free air operation at TA = 45 °C R + L-load C-load I F(AV) 0.9 0.8 A Maximum DC blocking voltage V DC 65 125 200 400 600 V Maximum peak working voltage V RWM 90 180 300 600 900 V Maximum non-repetitive peak voltage V RSM 100 200 350 650 1000 V Maximum repetitive peak forward surge current I FRM 10 A Peak forward surge current single sine wave on rated load I FSM 45 A Rating for fusing at Tj = 125 °C (t < 100 ms) I 2t 10 A 2sec Minimum series resistor C-load at VRMS = ± 10 % R T 1.0 2.0 4.0 8.0 12 Ω Maximum load capacitance + 50 % - 10 % CL 5000 2500 1000 500 200 µF Operating junction temperature range T J - 40 to + 125 °C Storage temperature range T STG - 40 to + 150 °C
Figure 3. Maximum Non-Repetitive Peak Forward Surge Figure 4. Typical Forward Characteristics Per Diode
1.0 Cycle
Figure 5. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.