2SB1258 SANKEN | Alldatasheet
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IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating Collector-Emitter Voltage VCE (V) Collector Current IC (A) IB=–3.4mA –2.4mA –2.0mA –1.8mA –1.2mA –0.9mA Safe Operating Area (Single Pulse)fT –IE Characteristics (Typical) –0.6 Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) –4A –6A IC =–2A Collector Current IC (A) DC Current Gain h FE (VCE =–4V) 500 8000 5000 1000 Typ 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0.05 0.1 0.5 1 5 6 100 120 80Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) Typ –0.05 –0.5 –0.1 –10 –20 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC 100 µs 500 µs 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) 50x50x2 100x100x2 150x150x2 With Infinite heatsink Without Heatsink 10ms 1ms Without Heatsink Natural Cooling 0 –2.2 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) (VCE =–4V) 100 5000 500 1000 8000 Collector Current IC (A) DC Current Gain h FE 25˚C –30˚C 125˚C Natural Cooling Silicone Grease Heatsink: Aluminum in mm Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings –100 –100 –6( Pulse–10) 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Ratings –10max –10max –100min 1000min –1.5max –2max 100typ 100typ Unit mA mA V V V MHz pF Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz Darlington 2SB1258 (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 0.6typ tstg (ms) 1.6typ tf (ms) 0.5typ IB1 (mA) VBB1 (V) –10 ø3.3±0.2 10.1±0.2 4.0±0.2 16.9±0.313.0min 8.4±0.2 0.8±0.2 3.9 ±0.2 2.542.54 1.35±0.15 0.85+0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.20.45+0.2 -0.1 BE C a b External Dimensions FM20(TO220F) Weight : Approx 2.0g a. Part No. b. Lot No. B C E(3kΩ )(100Ω ) Equivalent circuit