2SB1184 KEXIN | Alldatasheet
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Low VCE(sat). PNP silicon transistor. Epitaxial planar type Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -60 V Collector-emitter voltage V CEO -50 V Emitter-base voltage V EBO -5 V Collector current I C -3 A Collector power dissipation(Tc=25 ) PC 1W Junction temperature Tj 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BV CBO IC=-50ìA -60 V Collector-emitter breakdown voltage BV CEO IC=-1mA -50 V Emitter-base breakdown voltage BV EBO IE=-50ìA -5 V Collector cutoff current I CBO VCB=-40V -1 ìA Emitter cutoff current I EBO VEB=-4V -1 ìA Collector-emitter saturation voltage V CE(sat) IC=- 2 A ,IB= -0.2A -1 V DC current transfer ratio h FE VCE=- 3 V ,IC= -0.5A 82 390 Output capacitance f T VCE=- 5 V ,IE=0.5A, f=30MHz 70 MHz Transition frequency C ob VCB= -10V,IE=0A,f=1MHz 50 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390