B1101U_4L LITTELFUSE | Alldatasheet

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Telecom Design Guide • © 2006 Littelfuse 3 - 81 www.littelfuse.com SIDACtor Devices Battrax® Dual Port Negative SLIC Protector This Battrax device is an integrated overvoltage protection solution for SLIC-based (Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using four SCRs and four gate diodes. The device is referenced to V BAT and conducts when a voltage that is more negative than -VREF is applied to the cathode (Pins 1, 3, 4, or 6) of the SCR. During conduction, all negative transients are shorted to Ground. All positive transients are passed to Ground by the diodes. For specific diagrams showing these Battrax applications, see Figure 6.48 in Section 6, “Reference Designs” of this Telecom Design Guide. * “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For individual “UA” and “UC” surge ratings, see table below. General Notes:

  • All measurements are made at an ambient temperature of 25 °C. I PP applies to -40 °C through +85 °C temperature range.
  • I PP is a repetitive surge rating and is guaranteed for the life of the product.
  • I PP ratings assume a VREF = ±48 V.
  • V DRM is measured at IDRM.
  • V S is measured at 100 V/µs.
  • V REF maximum value for the negative Battrax is -200 V. * Current waveform in µs ** Voltage waveform in µs Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IGT mAmps IT Amps IH mAmps Surge Ratings in Amps Series IPP ITSM 50 / 60 Hz di/dt 0.2x310 * 0.5x700 ** 2x10 * 2x10 ** 8x20 * 1.2x50 ** 10x160 * 10x160 ** 10x560 * 10x560 ** 5x320 * 9x720 ** 10x360 * 10x360 ** 10x1000 * 10x1000 ** 5x310 * 10x700 ** Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps/µs A 20 150 150 90 50 75 75 45 75 20 500 C 50 500 400 200 150 200 175 100 200 50 500 (T) (R) (-VREF) Ground (T) (R)

www.littelfuse.com 3 - 82 © 2006 Littelfuse • Telecom Design Guide Battrax® Dual Port Negative SLIC Protector Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. Thermal Considerations Package Symbol Parameter Value Unit Modified MS-013 T J Operating Junction Temperature Range -40 to +125 °C TS Storage Temperature Range -65 to +150 °C RθJA Thermal Resistance: Junction to Ambient 60 °C/W Capacitance Values Part Number pF MIN MAX B1101UA 4L 50 200 B1101UC 4L 50 200 B1161UA 4L 50 200 B1161UC 4L 50 200 B1201UA 4L 50 200 B1201UC 4L 50 200 IH IDRM VDRM VT VS IGT IT VF V-I Characteristics 100 tr td Peak Value Half Value t – Time (µs) IPP – Peak Pulse Current – %I PP tr = rise time to peak value td = decay time to half value Waveform = t r x td tr x td Pulse Waveform -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Percent of VS Change – % 25 ˚C Normalized VS Change versus Junction Temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Case Temperature (TC) – ˚C Ratio of IH IH (TC = 25 ˚C) 25 ˚C Normalized DC Holding Current versus Case Temperature