B1151

2SB1151 NEC | Alldatasheet

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NEC PNP SILICON POWER TRANSISTOR DESCRIPTION The 281151 is a Low Vo¢j(sqt) transistor which has a large current ~ | PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor. 8.5 MAX. (0.334 MAX.) 2.8 MAX. FEATURES © Low Collector Saturation Voltage. eazzozeotze (0.110 MAX.) © Large Current. as BS Pid 3k 'cioc) = —5.0 A, Ieiputse) = —8.0 A ois as © High Total Power Dissipation. : Py = 1.3W ris © Complementary to 2SD1691. 12 a > q (0.047) FIN Satz |= i ABSOLUTE MAXIMUM RATINGS . 48 |= 0.5588 I MS Olu (0.021) Maximum Temperatures Sols i is Maximum Power Dissipations 2323 047) : . 95% 1. Emite Maximum Voltages and Currents (Ta = 25 °C) 2. Collector connected * PW S 10 ms, Duty Cycle s 50% ELECTRICAL CHARACTERISTICS (Ta = 25 °C) | VcElsat)"” Collector Saturation Voltage —014 03 v Ic =—2.0A, Ip =—0.2A : Vee lsat) Base Saturation Voltage -09 -12 v Ig =-2.0 A, Ig=-0.2A | heer’? DC Current Gain 60 - Voge =-1.0V, I¢=-0.1A ) hee2 DC Current Gain 100 200 400 - Voce =-1.0V, I¢=-2.0A heeg*? DC Current Gain 50 - VoE=-2.0V, I¢=-5.0A | IcBo Collector Cutoff Current -10 HA Vop = 50 V. le =0 | leso Emitter Cutoff Current -10 HA Vep>-7.0V, I¢=0 ton Turn On Time 0.15 1.0 bs Storage Th 0.78 25 Io = -2.0 A, Igy =—1g2=0.2A . t Fall Time 0.18 1.0 bs : ** PW S350 us, Duty Cycle < 2% Classification of hreg [roe [oom of oe fT «| | [-ranse | toowea00 | “vena [ato a00_| ) Test Conditions: Veg = —1.0 V, Ig =-2.0A eg 249

TYPICAL CHARACTERISTICS (T= 25 °C) | TOTAL POWER DISSIPATION vs. DERATING CURVE OF ag AMBIENT TEMPERATURE SAFE OPERATING AREA vote eae OPERATING AREA Tg pp couse NA ea = * [| TT | | Seog i ‘ oe § 20 B10 < -4of§ 1 OS et PORCCI Ae g 8 oo) we #21 TPA & 3 Oy 3 ON

3 K = oo) vat 3 SSS NAH

Poo ‘ 8 ag Oooh LL NWT bs, NU} POON TT) “IT es ee ee a -o.1l 0 50 100 150 200 2 0 50 100 150 200 —10 -2.0-4.0-6.0--10 -20 —40-60-100 Ta—Ambient Temperature—"C Ta—Ambient Temperature—"C VoE—Collector to Emitter Voltage—V COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. REVERSE BIAS SAFE COLLECTOR TO EMITTER COLLECTOR TO EMITTER 10, OPERATING AREA 10 VOLTAGE ° VOLTAGE 7 - 7 pr ETA itl) <Low | ope i 5 s i | Seenaene 2 =e aee 3 g 3 BA —| B- = o a ° 8 ; 5 a, Zoe ce la > od GO 1, -02 +— - AR aes aie fi. Q ° —20 -40 -60 -80 -100 o -04 -08 -12 -16 -20 o -10 -20 -30 -40 -50 VceE—Collector to Emitter Voltage—V Vcg—Collector to Emitter Voltage—V Vcg—Collector to Emitter Voltage—V g COLLECTOR AND BASE Ld TRANSIENT THERMAL (DC CURRENT GAIN vs. SATURATION VOLTAGE vs. i RESISTANCE COLLECTOR CURRENT >. COLLECTOR CURRENT 8 SS SS Sacee ! 0 SS a § sol =e Se eiceon 3004 Bildiameiiamaan 3; °° Sata to-10-8 |

5 Sool SE rric=-01 « 2) Sh

Bool AH ite en TS s&s SSH OSS ee 8 = ro SS yok tH § softer = © soft Po 8s Se eS 2 aeons 220 SSS = oot tie iS S 5 saan alc sy ai | 2S SSS SS 22 LLU ell 3 4 3300 SSS Se © CEM OI TEC TTI TTT TT) St “03H 3 orezes 12s 1020 S010 mm sooi000 OSS gS FC g PW~Pulse Width— ms ES eee 83 Cem TT Ti) I¢—Collector Current—A I¢—Collector Current—A 250