2SB1116 NEC | Alldatasheet
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2SB1116, 2SB1116A oo DESCRIPTION The 2SB1116/2SB1116A are designed for use in driver and output stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters 52 MAX. | FEATURES © Low Collector Saturation Voltage. [| Veetsat) = -0.20 V TYP. (Ic = -1.0 A, Ig = -50 mA) @ High Break Down Voltage. Vceo = —50 V/-60 V (2SB1116/2SB1116A) © High Total Power Dissipation. —_: Py = 0.75 W (Ta = 25°C) © Complementary to the NEC 2SD1616/2SD1616A NPN Transistor. a Il | Ire 2 ABSOLUTE MAXIMUM RATINGS z Maximum Temperatures Hl | il ° Maximum Power Dissipation (T, = 25 °C) (iii\\| Maximum Voltages and Currents (Ta = 25 °C) 2SB1116/2SB1116A NES, a _ _ 1, Emitter EIAJ :$C-431 *PW <10 ms, Duty Cycle < 50 % ELECTRICAL CHARACTERISTICS (Ta = 25 °C) 2SB1116/2SB1116A beer? DC Current Gain 135 600 = VeE=-2.0 V, Ie = -100 mA hre2 DC Current Gain 81 = Vee=-2.0V, Ig =-1.0A tr Gain Bandwidth Product 70 120 MHz Veg =—2.0 V, I¢=-100mA Cob Output Capacitance 25 pF = Vog=—10V, le =0, f = 1.0 MHz : 'cBo Collector Cutoff Current -100 nA Vcg=—60 V/-80V, Ip =0 'eBO Emitter Cutoff Current 100 nA Veg=-6.0V,Ic=0 Vee Base to Emitter Voltage —600 -700 mV Vce=—2.0V,I¢=—50mA Vcelsat) Collector Saturation Voltage -0.2 -03 v ic =-1.0A,Igp=—-50mA | Veelsat) Base Saturation Voltage -0.9 -1.2 v Ig =-1.0A, Ip=—5O0mA ton Turn-On Time 0.07 bs Vee =-10V, Ic = -100 mA tstg Storage Time 0.70 bs (‘= = =Ig2=-10mA ) | te Fall Time 0.07 us VBEloff) = 2to3 V : **Pulsed PW S 350 us, Duty Cycle < 2% Classification of hre1 [monk [ot fT ok fT Test Conditions: Voge = —2.0 V, Ic = —100mA a . 241
2SB1116,2SB1116A NEC TYPICAL CHARACTERISTICS (T, = 25 °c) AMBIENT TEMPERATUREON iat ANSIENT THERMAL R ESISTANCE SOLLECTOR 10 EMITTER VOLTAGE 12) — 1005 | z -5 [2h ET tg | | [| Eel Seeiiieesii eee aT TLL! ACI ti) -20 Pe jo . “COS | “AeFEFED oo BrN [| 1 ares er ® od B oH wet «866 ) = ~FFttrt ll) os SH Wet |
3 Li NEL 6 SSS As oo
é TLS B 02 EAN “TO 5 8 b RS noo SP HISSEESHEY eee os 5075 00 25 0 ~ E= Fei Teta LITT Ta—Ambient Temperature—"C ~oo2}—) LT NY sf oT 4 SUT NI oo Hl TENT YoE~Collector to Emitter Votage—V Vog—Collector to Emitter Voltage-V COLLECTOR CURRENT vs. OC CURRENT GAIN vs. > COLLECTOR AND BASE SATURA- _ GOLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT A TREAT OE vs. COLLECTOR “CT SST SSS ve--eov] 12 roe | <4 Se soo Seed 88 TTI il * -oal a Sains oad owl [oom eT res zoo SUT ts § ae OPE tS sa 29 HA 8 veer 8 LIT) 2 2 -oos SSH ar! se 2 SS 0-02-08 -06 -08 —10 Aree een Oe 'o~Collector Current A Vce-Collector to Emitter Voltage—V I¢—Collector Current—A GAIN BANDWIDTH PRODUCT vs. COLLECTON 45 Base VOLTAGE SWITCHING TIME vs. COLLECTOR 1000 pS SSS 100 2 so =e Voe=— 20 SSS eS mel TTT erieaae | 2 S08 so a7 an sesaae Sooo be ee N a i Pet as
3 Et Fo Bitty es
B00 ape s 2g — TS e os SS See eS = E oH SS 2 cere ET INS 3 of Co Co in = 8 eee od IT NNT EN = 3 ESERRE Se = 02 ‘i | SCLC 6 2 Ree Nl
8 CSS SSS eae i a od SN
2 SS = 88 2 ae
; Sa sc | SSR & Coomera Sar ee Ig—Collector Current—A Veg-Collector to Base Voltage—V 'c~ Collector Current—A 242