AVS1ACP08

AVS12 STMICROELECTRONICS | Alldatasheet

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Technical content

AUTOMATIC VOLTAGE SWITCH (SMPS < 500W) CONTROLLER n 50/60Hz FULL COMPATIBILITY n INTEGRATED VOLTAGE REGULATOR n TRIGGERING PULSE TRAIN OF THE TRIAC n PARASITIC FILTER n LOW POWER CONSUMPTION TRIAC n HIGH EFFICIENCY AND SAFETY SWITCHING n UNINSULATED PACKAGE : AVS12CB n VDRM = ± 600V n IT(RMS) : 12A March 1995 B TO220AB (Plastic) P DIP8 (Plastic) V Mode V V Osc / In Osc / Out N.C. A2 G

DESCRIPTION

The AVS12 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 500 W. It is composed of 2 devices :

• The Controlleris optimized for low consump- tion and high security triggering of the triac. When connected to V SS , themode input acti- vates an additionaloption. If the main power drops from 220V to 110V, the triac control re- mains locked to the 220V mode and avoids any high voltage spike when the voltage comes back to 220V. When connected to V DD , themode input de- sactivates thisoption.
• The TRIAC is specially designed for this appli- cation. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and al- lows excellent immunity against disturbances. PIN CONNECTION

(1) Gate supply : IG =100mA – di/dt = 1A/µs * For either polarity of electrode A2 voltage with reference to electrode A1 (2) Tj = 110°C ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08 Symbol Parameter Value Unit Min. Max. VSS Supply voltage - 12 0.5 V VI/VO I / O voltage V SS - 0.5 0.5 V II/IO I / O current - 40 + 40 mA Tstg Storage Temperature - 60 + 150 °C Toper Operating Temperature code ” C ” 0 + 70 °C TRIAC AVS12CB T j=2 5°C (unless otherwise specified) Symbol Parameter Value Unit VDRM Repetitive peak off-state voltage (2) ± 600 V IT(RMS ) RMS on-state current (360° conduction angle) T C =7 0°C1 2 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) t = 8.3ms t = 10ms 105 100 A I2tI 2t value t = 10ms 50 A 2s dI/dt Critical rate of rise of on-state current (1) Repetitive F = 50Hz 20 A/µs Non Repetitive 100 dv/dt * Linear slope up to 0.67 VDRM Gate open T j=1 1 0°C5 0 V / µs Tstg Tj Storage Temperature Operating Junction Temperature - 40 + 150 0 + 110 °C Q Q Reset CP S CP OSC/IN OSC/OUT MODE Parasitic Filter Peak Voltage Dectector AVS1ACP08 Triggering Time Controller Supply Oscillator Zero Crossing Detector V V GG DD DD V V VM SS AVS12CB Mains mode Controller MR BLOCK DIAGRAM AVS12

• For either polarity of electrode A2 voltage with reference to electrode A1. DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS12CB Symbol Parameter Value Unit Min. Max. VGD VD =V DRM R L = 3.3kΩ Pulse duration> 20µs Tj = 110 °C 0.2 V VTM *I TM = 17A tp = 10ms Tj = 25 °C 1.75 V IDRM *V DRM rated Gate open Tj = 25°C1 0 µA Tj = 110°C 500 Symbol Parameter Value Unit Rth (j-a) Junction-to-ambient 60 °C/W Rth (j-c) DC Junction-to-case for DC 3 °C/W Rth (j-c) AC Junction-to-case for 360° conduction angle ( f= 50Hz) 2.3 °C/W THERMAL RESISTANCES TRIAC AVS12CB AVS12

Fig. 1 :Maximum RMS power dissipation versus RMS on- state current (F = 60Hz). (Curves are cut off by (dI/dt)c limitation) Fig. 2 :Correlation between maximum mean power dissipa- tion and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig. 3 :Non repetitive surge peak on state current for a sinusoidal pulse with width : t≤ 10ms, and corresponding value of I2t. Fig. 4 :On-state characteristics (maximum values). AVS12

Symbol Parameter Value Unit Min Typ Max VSS (pin 1) (Vreg) Shunt regulator - 10 - 9 - 8 V ISS (pin 1) (Vreg) (@ VSS =9 V ) Supply current 0.4 30 mA ISS (pin 1) (@ triac gate non connected) Quiescent current 0.7 mA f( p i n3 ) (@ R = 91kΩ ) (C = 100pF) Oscillator frequency 42 44 46 kHz VM (pin 8) Vth (3) Peak voltage of detection high-threshold 4.08 4.25 4.42 V VM (pin 8) Vh (3) Peak voltage of detection hysteresis 0.370 0.4 0.420 V (1) VM (pin 8) Vth (3) Zero-crossing detection high-threshold 95 110 125 mV VM (pin 8) Vh (3) Zero-crossing detection hysteresis 27 50 80 mV (2) Vrazht (4) Power-on-reset activation threshold Vreg x 0.89 V (2) Vrazlt (4) Power-down-reset activation threshold 3 6.5 V Mode (pin 7) VIL (4) VIH (4) 0.7 Vreg

0.3 Vreg V

VG (pin 5) VOL (IVG = 25mA) Leakage current (VG =V DD ) 650 +1 0 mV µA DC GENERAL ELECTRICAL CHARACTERISTICS (continued) CONTROLLER AVS1ACP08 T oper=2 5°C (unless otherwise specified) NOTES : (1) : This value gives a typical noise immunity on the zero-crossing detection of 110mV x 1018/18 = 6.20V on the main supply (2) : See following diagram (3) : Voltage referred to VSS (4) : Voltage referred to VDD POWER-ON AND POWER-OFF RESET BEHAVIOUR 0V 0V -2.7V-2.7V Vrazht Vrazlt Vreg = V - VSS DD Normal operation Power-on resetUndetermined Undetermined Reset power-off AVS12

G 4007 33µF 16V A 1 A 2 V V DD SS VDD VG VM 91k 1 % 100pF 5 % VSS AVS1ACP08 x 9.1K 18K 390 AVS12CB AVS12 TYPICAL APPLICATION

ORDERING INFORMATION

OPERATING TEMPERATURE : C = 0/70°C OPERATING TEMPERATURE : C = 0/70°C IDENTIFICATION PACKAGE : DIP 8 AUTOMATIC VOLTAGE SWITCH PACKAGE B: UNINSULATED TO220 AUTOMATIC VOLTAGE SWITCH IDENTIFICATION AVS12

Cooling method : C Marking : Type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. TO220AB (Plastic) PACKAGE MECHANICAL DATA

8 PINS - PLASTIC DIP CONTROLLER

I A G D B C F P N O M L J H REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 10.20 10.40 0.401 0.401 B 14.23 15.87 0.560 0.625 C 12.70 14.70 0.500 0.579 D 5.85 6.85 0.230 0.270 F 4.50 0.178 G 2.54 3.00 0.100 0.119 H 4.48 4.82 0.176 0.190 I 3.55 4.00 0.139 0.158 J 1.15 1.39 0.045 0.055 L 0.35 0.65 0.013 0.026 M 2.10 2.70 0.082 0.107 N 4.58 5.58 0.18 0.22 O 0.80 1.20 0.031 0.048 P 0.64 0.96 0.025 0.038 REF. DIMENSIONS Millimetres Inches a1 0.7 0.027 B 1.39 1.65 0.054 0.065 B1 0.91 1.04 0.036 0.041 b 0.5 0.020 b1 0.38 0.50 0.015 0.020 D 9.8 0.386 E 8.8 0.346 e 2.54 0.100 e4 7.52 0.300 F 7.1 0.280 I 4.8 0.189 L 3.3 0.130 Z 0.44 1.60 0.017 0.063 AVS12

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica- tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre- viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. AVS12