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  • All specifications are subject to change without notice.  Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications. Chip Varistors Countermeasure for surge voltage and static electricity AVR series Type: Issue date: AVR-M AVRL August 2013

(2/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. Varistors(SMD) Countermeasure for Surge Voltage and Static Electricity AVR Series AVR-M, AVRL Types Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value. Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity. CURRENT vs. VOLTAGE CHARACTERISTICS EQUIVALENT CIRCUIT THE EFFECT OF THE VARISTOR WITHOUT VARISTOR A malfunction and failure of electronic equipment WITH VARISTOR Suppress abnormal voltage by inserting varistor in a circuit Conformity to RoHS Directive Chip varistor /V1mA:12V Zener diode /Vz:6.8V Positive direction Negative direction Voltage(V) Current(A) 10–1 10–2 10–3 10–4 10–5 –10–1 –10–2 –10–3 –10–4 –10–5

2 Zener Diodes

ESD, Surge voltage Power line Signal line IC ESD, Surge voltage Power line Signal line Insert a varistor between a line and ground : Chip varistor IC

(3/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice.

FEATURES

 No polarity, due to symmetrical current-voltage characteristics. Equivalent to anode common type Zener diode.  Excellent electrostatic absorption capability. Response is as good or better than Zener diode. Keeps symmetrical current-voltage characteristics even after electrostatic absorption.  Adopted the inner electrodes lamination structure. Wide range of varistor voltages are available in series (6.8 to 39V). Low capacitance items are available in series (1.1pF to). World’s smallest 0402-, 0603-, 1005-, 1608-, 2012-chip types are available in series.  Excellent mount reliability. Good for Pb-free soldering. Adopted (Ni/Sn) electroplating. Achieved good solderability and solder heat resistance.  Can replace a Zener diode + capacitor combination. Reduced footprint and total mounting cost.

APPLICATIONS

 Electrostatic absorption  Pulse noise absorption TEMPERATURE RANGES APPLICATION EXAMPLES INTERNAL STRUCTURE CIRCUITS SYMBOL OPERATIONAL VOLTAGE RANGES RECOMMENDED REFLOW SOLDERING CONDITIONS Type AVR-M1005/1608/2012 AVR-M0402/0603/AVRL Operating –40 to +125°C –40 to +85°C Storage –40 to +125°C –40 to +85°C Consumer product Application Mobile phone Digital video camera Digital camera PDA Note PC DVD-ROM, CD-ROM CD/MD/MP3 player Game machine Data terminal LCD panel Touch panel Button and switch unit Battery terminal Audio-Video input-output terminal Microphone/receiver unit Controller unit In-car equipment CAN-BUS ECU Connector Air conditioner panel Car audio Car navigation Item Specification For eutectic solder For lead-free solder Tpre Preheating temperature 160 to 180°C 150 to 180°C Tmelt Solder melting temperature 200°C 230°C Tpeak Peak temperature 240°C max. 260°C max. tpre Preheating time 100s max. 120s max. tmelt Time more than solder melting temperature 30s max. 40s max. The number of times of reflow possible 2 max. 2 max. Varistor body (Zinc Oxide: ZnO semiconductor ceramics) Inner electrode (Palladium) Sn plating Ni plating Ag termination underlayer Circuit voltage(V) 50 1 01 52 02 5 30 250402 type 1005 type 282012 type 1608 type 28 0603 type 25 Tpeak Tmelt Tpre tpre tmelt peak Time (s)

(4/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. AVR-M TYPE PRODUCT IDENTIFICATION (1) Series name (2) Dimensions LW (3) Structure code (4) Varistor voltage (5) Varistor voltage tolerance (6) Packaging style (7) Capacitance and TDK internal code (5) Capacitance tolerance SHAPES AND DIMENSIONS 0402/0603/1005/1608/2012 TYPES Dimensions in mm RECOMMENDED PC BOARD PATTERN Dimensions in mm AVR-M 1005 C 270 M T AAB AVRM 1005 C 6R8 N T 101 N 0402 0.4 0.2mm 0603 0.6 0.3mm 1005 1.0 0.5mm 1608 1.6 0.8mm 2012 2.0 1.2mm 270 27 100V K± 1 0 % M± 2 0 % N ±30% TT a p i n g N ±30% Type L W T B min. Weight (mg)typ. Type a b c L WT B c a bb

(5/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice.

ELECTRICAL CHARACTERISTICS

TERMINOLOGY 1 8/20µs test waveform 2 10/1000µs test waveform Part No. Varistor voltage (Breakdown voltage) V 1mA(V)[DC1mA] Maximum continuous voltage (Rated voltage) Vdc(V) max. Clamping voltage Vcl(V) [8/20µs] Maximum energy E(Joule) [10/1000µs] max. Maximum peak current Ip(A) [8/20µs] max. Capacitance C(pF) [1kHz, 1Vrms] typ. Packaging quantities (Taping) (pieces/reel) 0402 type 0603 type 15,000 AVRM0603C080MT101N 8 (6.4 to 9.6) 5.5 17[1A] 0.01 4 100 (70 to 130) AVRM0603C120MT101N 12.8 (10 to 15.6) 5.5 20[1A] 0.01 5 100 (70 to 130) AVR-M0603C120MTAAB 12 (9.6 to 14.4) 7.5 23[1A] 0.01 1 33 1005 type 10,000 AVR-M1005C080MTAAB 8 (6.4 to 9.6) 5.5 14[1A] 0.04 25 650 AVR-M1005C080MTADB 8 (6.4 to 9.6) 5.5 14[1A] 0.04 25 480 AVR-M1005C080MTABB 8 (6.4 to 9.6) 5.5 15[1A] 0.02 3 100 AVR-M1005C080MTACB 8 (6.4 to 9.6) 5.5 19[1A] 0.01 1 33 AVR-M1005C120MTACC 12 (9.6 to 14.4) 7.5 21[1A] 0.01 24 460 [1MHz] AVR-M1005C120MTAAB 12 (9.6 to 14.4) 7.5 20[1A] 0.05 10 130 AVR-M1005C180MTAAB 18 (14.4 to 21.6) 11 30[1A] 0.06 16 120 [1MHz] AVRM1005C270KT101N 27 (24 to 30) 19 44[1A] 0.06 4 100 (70 to 130) AVR-M1005C270MTAAB 27 (21.6 to 32.4) 15 57[1A] 0.06 4 40 AVR-M1005C270MTABB 27 (21.6 to 32.4) 15 59[1A] 0.05 1 15 1608 type AVR-M1608C080MTAAB 8 (6.4 to 9.6) 5.5 15[2A] 0.09 30 650 4,000 AVR-M1608C120MT6AB 12 (9.6 to 14.4) 7.5 20[2A] 0.09 50 1050 AVR-M1608C120MT2AB 12 (9.6 to 14.4) 7.5 20[2A] 0.06 15 400 AVR-M1608C180MT6AB 18 (14.4 to 21.6) 11 30[2A] 0.1 30 600 AVR-M1608C220KT6AB 22 (19.8 to 24.2) 16 34[2A] 0.1 30 560 AVR-M1608C220KT2AB 22 (19.8 to 24.2) 16 37[2A] 0.03 10 210 AVR-M1608C270KT6AB 27 (24 to 30) 19 42[2A] 0.1 48 430 AVR-M1608C270KT2AB 27 (24 to 30) 19 42[2A] 0.1 20 160 AVR-M1608C270KTACB 27 (24 to 30) 19 54[2A] 0.05 10 60 AVRM1608C270KT800M 27 (24 to 30) 19 53[2A] 0.02 28 80 (64 to 96) AVR-M1608C270MTAAB 27 (21.6 to 32.4) 17 52[2A] 0.05 2 30 AVR-M1608C270MTABB 27 (21.6 to 32.4) 17 52[2A] 0.05 2 15 AVRM1608C390KT271N 39 (35 to 43) 28 69[2A] 0.1 78 270 (189 to 351) 2012 type AVR-M2012C120MT6AB 12 (9.6 to 14.4) 7.5 20[5A] 0.2 60 1000 2,000AVR-M2012C220KT6AB 22 (19.8 to 24.2) 16 38[5A] 0.3 100 800 AVR-M2012C390KT6AB 39 (35 to 43) 28 62[5A] 0.3 100 430 Item Unit Terminology Varistor voltage (Breakdown voltage) V1mA (V) Voltage measured across the varistor when DC1mA is applied. Maximum continuous voltage (Rated voltage) Vdc (V) Maximum DC voltage that can be applied continuously. Varistor leakage current: 50µA max. (Within the range of maximum allowable circuit voltage) Clamping voltage Vcl (V) Voltage appearing across the varistor when a pulse current (8/20µs 1) of specified peak value is applied. Maximum energy E (Joule) Maximum energy that can be absorbed without deteriorating varistor characteristics when an impulse (10/1000µs 2) is applied once. Maximum peak current Ip (A) Maximum current that can be withstood without deteriorating varistor characteristics when an impulse current (8/20µs 1) is applied once. Capacitance C (pF) Capacitance measured at 1kHz (or 1MHz) of oscillator frequency and 1Vrms of oscillator voltage. 20µs 50% 90% 100%Current Time 8µs 1000µs 50% 90% 100% 10µs Energy Time

(6/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. AVRL TYPE PRODUCT IDENTIFICATION (1) Series name (2) Dimensions LW (3) Maximum continuous voltage (4) Capacitance (5) Capacitance tolerance (6) Packaging style (7) Varistor voltage and TDK internal code SHAPES AND DIMENSIONS Dimensions in mm RECOMMENDED PC BOARD PATTERN Dimensions in mm 04 0.4 0.2mm 06 0.6 0.3mm 10 1.0 0.5mm 16 1.6 0.8mm 1A 10Vdc 1C 16Vdc 1E 25Vdc 1R1 1.1pF 2R2 2.2pF 3R3 3.3pF 6R8 6.8pF N ±0.3pF D ±0.5pF F± 1 p F G± 2 p F TT a p i n g Type L W T B min. Weight (mg)typ. Type a b c L WT B c a bb Part No. Capacitance C(pF) [1MHz, 1Vrms] Maximum continuous voltage (Rated voltage) Vdc(V) max. Insulation resistance Rdc(M) [3Vrms] min. Varistor voltage V 1mA(V)[DC1mA] typ. Packaging quantities (Taping) (pieces/reel) 0402 type AVRL041E1R1NTA 1.1[0.8 to 1.4] 25 10 39 20,000 0603 type AVRL061E1R1NTA 1.1[0.8 to 1.4] 25 10 39 15,000 1005 type AVRL101A1R1NTA 1.1[0.8 to 1.4] 10 10 90 10,000 AVRL101A1R1NTB 1.1[0.8 to 1.4] 10 10 39 AVRL101C2R2DTA 2.2[1.7 to 2.7] 16 10 90 AVRL101A3R3FTA 3.3[2.3 to 4.3] 10 10 27 AVRL101A6R8GTA 6.8[4.8 to 8.8] 10 10 27 1608 type AVRL161A1R1NTA 1.1[0.8 to 1.4] 10 10 90 4,000AVRL161A1R1NTB 1.1[0.8 to 1.4] 10 10 39 AVRL161A3R3FTA 3.3[2.3 to 4.3] 10 10 27 AVRL161A6R8GTA 6.8[4.8 to 8.8] 10 10 27 Item Unit Terminology Capacitance C (pF) Capacitance measured at 1MHz of oscillator frequency and 1Vrms of oscillator voltage. Maximum continuous voltage (Rated voltage) Vdc (V) Maximum DC voltage that can be applied continuously. Varistor leakage current: 50µA max. (Within the range of maximum allowable circuit voltage) Insulation resistance Rdc (M) Insulation resistance appearing across the varistor when specified voltage is applied. Varistor voltage (Breakdown voltage) V 1mA (V) Voltage measured across the varistor when DC1mA is applied.

(7/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. TYPICAL ELECTRICAL CHARACTERISTICS CURRENT vs. VOLTAGE CHARACTERISTICS TRANSMISSION CHARACTERISTICS IMPEDANCE vs. FREQUENCY CHARACTERISTICS CAPACITANCE vs. FREQUENCY CHARACTERISTICS V1mA:8V V1mA:12V V1mA:18V V1mA:22V V1mA:27V 01 02 0 3 0 4 0 Voltage(V) Current(A) 100 10–1 10–2 10–3 10–4 10–5 10–6 10–7 30pF 15pF 6.8pF 3.3pF 1050pF 650pF 400pF 160pF 1 10 100 1000 10000 Frequency(MHz) Insertion loss(dB) –10 –20 –30 –40 –50 –60 1 10 100 1000 10000 Frequency(MHz) Impeadance(Ω) 1000 10000 100 0.1 0.01 30pF 15pF 6.8pF 3.3pF 1050pF 650pF 400pF 160pF 10000 1 10 100 1000 10000 Frequency(MHz) Capacitance(pF) 1000 10000 100 1050pF 650pF 400pF 160pF 30pF 15pF 3.3pF 6.8pF

(8/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. ELECTROSTATIC DISCHARGE TESTS TEST CONDITIONS 150pF , 330 contact discharge Charged voltage /8kV, 0.1s interval MEASURING CIRCUIT AVR-M0603 TYPE AVR-M1608 TYPE AVR-M1005 TYPE AVRL101A3R3F 10MΩ 330Ω 150pFHigh voltage DC power supply Discharge gun ESD simulatorESD simulator Test sample 0.1 1 10 100 Number of discharge(Times) ΔV1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) ΔV1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) ΔV1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) Capacitance(pF) [1MHz]

(9/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. ELECTROSTATIC ABSORPTION CHARACTERISTICS DISCHARGE CURRENT WAVEFORM DISCHARGE VOLTAGE WAVEFORM WAVEFORM PARAMETERS [IEC61000-4-2] MEASURING CIRCUIT ESD ABSORPTION CHARACTERISTICS COMPARISON OF VARIOUS ELEMENTS –50 0 50 100 150 200 250 300 Time(ns) Discharge current(A) 7 150pF, 330Ω, Contact discharge, Test level 1 –50 0 50 100 150 200 250 300 Time(ns) Voltage(V) 300 200 150 100 350 250 –50 Open waveform AVR-M1005C120MTAAB / V1mA:12V AVR-M1005C080MTAAB / V1mA:8V Zener diode /Vz:6.2V Test level ESD Charge voltage (kV) First peak current of discharge (A) Rise time (ns) 1 2 7.5 0.7 to 1.0 2 4 15 0.7 to 1.0 3 6 22.5 0.7 to 1.0 4 8 30 0.7 to 1.0 10MΩ 330Ω 50Ω 150pF Discharge gun ESD simulator ESD simulator Test sample Oscilloscope 60dB attenuator I/O impedance: 50Ω Frequency range: DC to 18GHz High voltage DC power supply Clamping voltage(V) 316 45 58 47 Open waveform 117 16 24 21 350 300 250 200 150 100 AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V Peak Average 271V down 101V down 258V down 93V down 269V down 96V down 30 100 Peak voltage:Peak voltage of standing up part Average voltage : Average voltage of 30 to 100nsPeak voltage (voltage) (ns) Average voltage ESD (Electro Static Discharge) absorption characteristics of V1mA-8V is superior to Vz-6.2V Zener diode.

(10/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. MERITS OF REPLACEMENT FROM ZENER DIODE (1) Reduction in the number of parts REDUCTION EXAMPLES Zener diode+capacitor Chip varistor EXAMPLE OF REPLACEMENT AT AUDIO TERMINAL (2) Improved electrostatic absorption capability COMPARE DATA OF CHIP VARISTOR AND ZENER DIODE ABOUT IC PROTECTION APPLICATION EXAMPLES SMART PHONE AUDIO/VIDEO Audio/out Audio/out Audio AMP Audio AMP Audio connector Audio connector : Chip varistor 10–3 10–4 10–5 10–6 10–7 Insulation resistance of tested circuit(Ω) 02468 1 0 1 2 1 4 ESD voltage(kV) AVR-M1608C120MT6AB With Zener Diode CMOS: D74HC04C ESD generator : Noise Laboratory Co.,Ltd., ESS -630A 200pF-0Ω method model equipment Contact type discharge ESD applied point: Vcc-ground To LCD driver : Chip varistor LCD panel Button Data terminal Microphone/Receiver Audio Digi Monitor OUT Video1 in Video2 in Video3 in Video5 in Video Video Video Video L/MONO L/MONO L/MONO L/MONO Audio Audio Audio Audio L R : Chip varistor

(11/11) 002-01 / 20130821 / e9c11_avr.fm  All specifications are subject to change without notice. APPLICATION EXAMPLES USB 2.0 MEASURING CIRCUIT WITHOUT VARISTOR WITH VARISTOR AVRL101A3R3FTA (3.3pF) AVRL101A6R8GTA (6.8pF) VDD F.G. USB connector USB cable USB IC : Chip varistor IC USB2.0 board on PC Test board Test set Sample : Chip varistor