AVR-M0603C120MBAAB

AVRL101A3R3FTA TDK | Alldatasheet

Document overview

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Technical content

• All specifications are subject to change without notice.  Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications. Chip Varistors Countermeasure for surge voltage and static electricity AVR series Type: Issue date: AVR-M AVRL September 2011

(1/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. Varistors(SMD) Countermeasure for Surge Voltage and Static Electricity AVR Series AVR-M, AVRL Types Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value. Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity. CURRENT vs. VOLTAGE CHARACTERISTICS EQUIVALENT CIRCUIT THE EFFECT OF THE VARISTOR WITHOUT VARISTOR A malfunction and failure of electronic equipment WITH VARISTOR Suppress abnormal voltage by inserting varistor in a circuit Conformity to RoHS Directive Chip varistor /V1mA:12V Zener diode /Vz:6.8V Positive direction Negative direction Voltage(V) Current(A) 10–1 10–2 10–3 10–4 10–5 –10–1 –10–2 –10–3 –10–4 –10–5

2 Zener Diodes

ESD, Surge voltage Power line Signal line IC ESD, Surge voltage Power line Signal line Insert a varistor between a line and ground : Chip varistor IC

(2/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice.

FEATURES

 No polarity, due to symmetrical current-voltage characteristics. Equivalent to anode common type Zener diode.  Excellent electrostatic absorption capability. Response is as good or better than Zener diode. Keeps symmetrical current-voltage characteristics even after electrostatic absorption.  Adopted the inner electrodes lamination structure. Wide range of varistor voltages are available in series (6.8 to 39V). Low capacitance items are available in series (1.1pF to). World’s smallest 0603-, 1005-, 1608-, 2012-chip types and 1410-array type are available in series.  Excellent mount reliability. Good for Pb-free soldering. Adopted (Ni/Sn) electroplating. Achieved good solderability and solder heat resistance.  Can replace a Zener diode + capacitor combination. Reduced footprint and total mounting cost.

APPLICATIONS

 Electrostatic absorption  Pulse noise absorption TEMPERATURE RANGES APPLICATION EXAMPLES INTERNAL STRUCTURE CIRCUITS SINGLE TYPE ARRAY TYPE OPERATIONAL VOLTAGE RANGES RECOMMENDED REFLOW SOLDERING CONDITIONS Type AVR-M1005/1608/2012 AVR-M14A2/0603/AVRL Operating –40 to +125°C –40 to +85°C Storage –40 to +125°C –40 to +85°C Consumer product Application Mobile phone Digital video camera Digital camera PDA Note PC DVD-ROM, CD-ROM CD/MD/MP3 player Game machine Data terminal LCD panel Touch panel Button and switch unit Battery terminal Audio-Video input-output terminal Microphone/receiver unit Controller unit In-car equipment CAN-BUS ECU Connector Air conditioner panel Car audio Car navigation Varistor body (Zinc Oxide: ZnO semiconductor ceramics) Inner electrode (Palladium) Sn plating Ni plating Ag termination underlayer 7.5 Circuit voltage(V) 50 1 01 52 02 5 30 0603 type 1005 type 1608 type 2012 type 1410 type Natural cooling 10s max. Preheating 60 to 120s Soldering 60s max. 220˚C 250˚C 260˚C max. 180˚C 150˚C Time(s)

(3/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. AVR-M TYPE PRODUCT IDENTIFICATION (1) Series name (2) Dimensions L×W (3) Structure code (4) Varistor voltage (5) Varistor voltage tolerance (6) Packaging style (7) Capacitance and TDK internal code SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PAT- TERN 0603/1005/1608/2012 TYPES Dimensions in mm Dimensions in mm

1410 TYPE

0603 0.6 ×0.3mm 1005 1.0 ×0.5mm 1608 1.6 ×0.8mm 2012 2.0 ×1.2mm 14A2 1.4 ×1.0mm (2-element) 270 27 ×100V K± 1 0 % M± 2 0 % TT a p i n g BB u l k Type L W T B min. Weight (mg)typ. T y p e abc L WT B c a bb 1.37±0.2 1.0±0.2 0.2typ.0.6max. 0.36±0.2 0.64typ. 0.32±0.2 Weight: 4mg typ. Dimensions in mm 0.6 to 0.66 0.3 to 0.4 0.35 to 0.45 0.65 to 0.95 1.0 to 1.4 Dimensions in mm

(4/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice.

ELECTRICAL CHARACTERISTICS

∗ : Packaging style(T: Taping/B: Bulk) TERMINOLOGY ∗1 8/20µs test waveform ∗2 10/1000µs test waveform Part No. Varistor voltage (Breakdown voltage) V1mA(V)[DC1mA] Maximum continuous voltage (Rated voltage) Vdc(V) Clamping voltage Vcl(V) [8/20µs] Maximum energy E(Joule) [10/1000µs] Maximum peak current Ip(A) [8/20µs] Capacitance C(pF) [1kHz, 1Vrms] Packaging quantities (Taping) (pieces/reel) 0603 type AVRM0603C6R8N 1005 type 10,000 1608 type 4,000 2012 type 1410 type Item Unit Terminology Varistor voltage (Breakdown voltage) V 1mA (V) Voltage measured across the varistor when DC1mA is applied. Maximum continuous voltage (Rated voltage) Vdc (V) Maximum DC voltage that can be applied continuously. Varistor leakage current: 50µA max. (Within the range of maximum allowable circuit voltage) Clamping voltage Vcl (V) Voltage appearing across the varistor when a pulse current (8/20µs ∗1) of specified peak value is applied. Maximum energy E (Joule) Maximum energy that can be absorbed without deteriorating varistor characteristics when an impulse (10/1000µs ∗2) is applied once. Maximum peak current Ip (A) Maximum current that can be withstood without deteriorating varistor characteristics when an impulse current (8/20µs∗1) is applied once. Capacitance C (pF) Capacitance measured at 1kHz (or 1MHz) of oscillator frequency and 1Vrms of oscillator voltage. 20µs 50% 90% 100%Current Time 8µs 1000µs 50% 90% 100% 10µs Energy Time

(5/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. AVRL TYPE PRODUCT IDENTIFICATION (1) Series name (2) Dimensions L×W (3) Maximum continuous voltage (4) Capacitance (5) Capacitance tolerance (6) Packaging style (7) Varistor voltage and TDK internal code SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PAT- TERN Dimensions in mm Dimensions in mm ∗ : Packaging style(T: Taping/B: Bulk) TERMINOLOGY AVRL 10 1A 3R3 F T A 10 1.0 ×0.5mm 16 1.6 ×0.8mm 1A 10Vdc 1R1 1.1pF 3R3 3.3pF 6R8 6.8pF N ±0.3pF F± 1 p F G± 2 p F TT a p i n g BB u l k Type L W T B min. Weight (mg)typ. T y p e abc L WT B c a bb Part No. Capacitance C(pF) [1MHz, 1Vrms] Maximum continuous voltage (Rated voltage) Vdc(V) Insulation resistance Rdc(MΩ) [3Vrms] Varistor voltage V1mA(V)[DC1mA] Packaging quantities (Taping) (pieces/reel) 1005 type AVRL101A1R1N 10,000 1608 type Item Unit Terminology Capacitance C (pF) Capacitance measured at 1MHz of oscillator frequency and 1Vrms of oscillator voltage. Maximum continuous voltage (Rated voltage) Vdc (V) Maximum DC voltage that can be applied continuously. Varistor leakage current: 50µA max. (Within the range of maximum allowable circuit voltage) Insulation resistance Rdc (MΩ) Insulation resistance appearing across the varistor when specified voltage is applied. Varistor voltage (Breakdown voltage) V 1mA (V) Voltage measured across the varistor when DC1mA is applied.

(6/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. TYPICAL ELECTRICAL CHARACTERISTICS CURRENT vs. VOLTAGE CHARACTERISTICS TRANSMISSION CHARACTERISTICS IMPEDANCE vs. FREQUENCY CHARACTERISTICS CAPACITANCE vs. FREQUENCY CHARACTERISTICS V1mA:8V V1mA:12V V1mA:18V V1mA:22V V1mA:27V 01 02 0 3 0 4 0 Voltage(V) Current(A) 100 10–1 10–2 10–3 10–4 10–5 10–6 10–7 30pF 15pF 6.8pF 3.3pF 1050pF 650pF 400pF 160pF 1 10 100 1000 10000 Frequency(MHz) Insertion loss(dB) –10 –20 –30 –40 –50 –60 1 10 100 1000 10000 Frequency(MHz) Impeadance(Ω) 1000 10000 100 0.1 0.01 30pF 15pF 6.8pF 3.3pF 1050pF 650pF 400pF 160pF 10000 1 10 100 1000 10000 Frequency(MHz) Capacitance(pF) 1000 10000 100 1050pF 650pF 400pF 160pF 30pF 15pF 3.3pF 6.8pF

(7/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. ELECTROSTATIC DISCHARGE TESTS TEST CONDITIONS 150pF , 330Ω contact discharge Charged voltage /8kV, 0.1s interval MEASURING CIRCUIT AVR-M0603 TYPE AVR-M1608 TYPE AVR-M1005 TYPE AVRL101A3R3F 10MΩ 330Ω 150pFHigh voltage DC power supply Discharge gun ESD simulatorESD simulator Test sample 0.1 1 10 100 Number of discharge(Times) ∆V1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) ∆V1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) ∆V1mA/V1mA(%) –10 –20 –30 –40 –50 –60 0.1 1 10 100 Number of discharge(Times) Capacitance(pF) [1MHz]

(8/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. ELECTROSTATIC ABSORPTION CHARACTERISTICS DISCHARGE CURRENT WAVEFORM DISCHARGE VOLTAGE WAVEFORM WAVEFORM PARAMETERS [IEC61000-4-2] MEASURING CIRCUIT ESD ABSORPTION CHARACTERISTICS COMPARISON OF VARIOUS ELEMENTS –50 0 50 100 150 200 250 300 Time(ns) Discharge current(A) 7 150pF, 330Ω, Contact discharge, Test level 1 –50 0 50 100 150 200 250 300 Time(ns) Voltage(V) 300 200 150 100 350 250 –50 Open waveform AVR-M1005C120MTAAB / V1mA:12V AVR-M1005C080MTAAB / V1mA:8V Zener diode /Vz:6.2V Test level ESD Charge voltage (kV) First peak current of discharge (A) Rise time (ns) 1 2 7.5 0.7 to 1.0 2 4 15 0.7 to 1.0 3 6 22.5 0.7 to 1.0 4 8 30 0.7 to 1.0 10MΩ 330Ω 50Ω 150pF Discharge gun ESD simulator ESD simulator Test sample Oscilloscope 60dB attenuator I/O impedance: 50Ω Frequency range: DC to 18GHz High voltage DC power supply Clamping voltage(V) 316 45 58 47 Open waveform 117 16 24 21 350 300 250 200 150 100 AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V Peak Average 271V down 101V down 258V down 93V down 269V down 96V down 30 100 Peak voltage:Peak voltage of standing up part Average voltage : Average voltage of 30 to 100nsPeak voltage (voltage) (ns) Average voltage ESD (Electro Static Discharge) absorption characteristics of V1mA-8V is superior to Vz-6.2V Zener diode.

(9/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. MERITS OF REPLACEMENT FROM ZENER DIODE (1) Reduction in the number of parts (2) Reduction in mounting cost COMPARISON OF FOOTPRINT Zener diode Chip varistor Save a mount area 65% down EXAMPLE OF REPLACEMENT AT AUDIO TERMINAL (3) Improved electrostatic absorption capability COMPARE DATA OF CHIP VARISTOR AND ZENER DIODE ABOUT IC PROTECTION APPLICATION EXAMPLES CELLULAR PHONE AUDIO/VIDEO 0.8mm 0.5mm 2.3mm 1.2mm Audio/out Audio/out Audio AMP Audio AMP Audio connector Audio connector : Chip varistor 10–3 10–4 10–5 10–6 10–7 Insulation resistance of tested circuit(Ω) 02468 1 0 1 2 1 4 ESD voltage(kV) AVR-M1608C120MT6AB With Zener Diode CMOS: D74HC04C ESD generator : Noise Laboratory Co.,Ltd., ESS -630A 200pF-0Ω method model equipment Contact type discharge ESD applied point: Vcc-ground To LCD driver : Chip varistor LCD panel Backlight LED Data terminal Key pad/Switch Microphone/Receiver Audio Digi Monitor OUT Video1 in Video2 in Video3 in Video5 in Video Video Video Video L/MONO L/MONO L/MONO L/MONO Audio Audio Audio Audio L R : Chip varistor

(10/10) 001-07 / 20110926 / e9c11_avr.fm  All specifications are subject to change without notice. APPLICATION EXAMPLES USB 2.0 MEASURING CIRCUIT WITHOUT VARISTOR WITH VARISTOR AVRL101A3R3FT(3.3pF) AVRL101A6R8GT(6.8pF) VDD F.G. USB connector USB cable USB IC : Chip varistor IC USB2.0 board on PC Test board Test set Sample : Chip varistor