AVA-26453LN-D+

AVA-26453LN-D+ MINI | Alldatasheet

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Technical content

50Ω 26 to 45 GHz

APPLICATIONS

y 5G MIMO and Back Haul Radio Systems y Satellite Ka-band Communications y T est and Measurement Equipment y Radar, EW, and ECM Defense Systems y Excellent alternative to the Broadcom AMMC-6241A,B REV. OR ECO-015730 AVA-26453LN-D+ MCL NY 221110 THE BIG DEAL y Single Supply Voltage, +3V and 80 mA y Wide Bandwidth, 26 to 45 GHz y Low Noise Figure, Typ. 2.9 dB at 35 GHz y Output IP3, Typ. +19.2 dBm at 35 GHz Features Advantages High Gain, Typ. 22.2 dB at 35 GHz. Suitable for wide bandwidth applications. P1dB and Output IP3, y P1dB Typ. +11.1 dBm at 35 GHz y OIP3 Typ. +19.2 dBm at 35 GHz Suitable as a driver amplifier in receiver/transmitter chains. Unpackaged Die Suitable for chip and wire hybrid assemblies. KEY FEATURES PRODUCT OVERVIEW The AVA-26453LN-D+ is a high gain low noise MMIC amplifier that operates from 26 to 45 GHz. The MMIC is fabricated on a high performance pHEMT process to enable high gain and low noise figure over a wide bandwidth in the millimeter wave region. This MMIC amplifier is impedance matched for a 50 ohm system, has unconditional stability, and operates from a single +3V supply voltage. The AVA-26453LN-D+ can be used as a first or second stage low noise amplifier for a wide variety of millimeter wave systems including 5G, Backhaul Radio, and Ka Band Satellite Systems. SEE ORDERING INFORMATION ON THE LAST PAGE Bonding Pad Posion Page 1 C CC 2 3 678 L1 L2 L3 L4 L5L6 C C CC A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, and compatibility with other components and environmental conditions and stresses. B. The AMMC-6241 part number is used for identification and comparison purposes only. Wideband Amplifier

50Ω 26 to 45 GHz Wideband Amplifier 1. Die is attached and measured on Mini-Circuits die characterization board. See Characterization & Application Circuits (Fig.1 and Fig.2) 2. Device Current Variation vs. T emperature = (Current in mA at +85°C – Current in mA at -45°C)/+130°C Parameter Condition (GHz) Min. Typ. Max. Units Frequency Range 26 45 GHz Gain 26 21.6 dB 30 21.1 35 22.2 40 18.1 45 14.7 Input Return Loss 26 8.9 dB 30 9.3 35 11.9 40 8.1 45 5.3 Output Return Loss 26 9.3 dB 30 11.3 35 14.1 40 10.7 45 10.9 Isolation 26-45 53.1 dB Output Power at 1 dB Compression 26 +11 dBm 30 +11.6 35 +11.1 40 +11.1 45 +10.2 Output Third-Order Intercept Point (Pout = -5dBm/Tone) 26 +19.8 dBm 30 +19.6 35 +19.2 40 +19.1 45 +18.9 Noise Figure 26 2.6 dB 30 2.7 35 2.9 40 3.4 45 3.7 Device Operating Voltage (VDD) +2.75 +3 +3.25 V Device Operating Current (IDD) 80 108 mA Device Current Variation Vs. Temperature2 -15.384 uA/°C Device Current Variation Vs. Voltage3 0.0333 mA/mV Thermal Resistance, Junction-to-Ground Lead (ΘJC) 42.5 °C/W ELECTRICAL SPECIFICATIONS 1 AT 25°C, Zo=50Ω AND, VDD=+3V, IDD=80mA, UNLESS NOTED OTHERWISE

50Ω 26 to 45 GHz SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION Function Pad Number Description RF-IN 1 RF-Input Pad RF-OUT 4 RF-Output Pad VDD1 8 DC Input Pad #1 VDD2 6 DC Input Pad #2 Ground 2, 3, 5, 7, 9, & Bottom of the Die The bond pads are connected to backside through vias and do not require any wire-bond connections to ground. BONDING PAD POSITION L1 L2 L3 L4 L5 L6 H1 H2 H3 H4 H5 Thickness Die Size Pad Size 1,2,3,4, 5 & 9 Pad Size 6 & 8 Pad Size 100 1900 x 800 80 x 100 100 x 100 100 x 110 DIMENSIONS IN µM, TYP. Bonding Pad Posion Page 1 C CC 2 3 678 L1 L2 L3 L4 L5L6 C C CC MAXIMUM RATINGS4 4. Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. 5. Tj = +85°C + (VDD)*(IDD)*(ΘJC) = +95°C. Keeping Tj below +95°C will keep typical MTTF > 100 years. Parameter Ratings Operating Case Temperature -45°C to +85°C Storage Temperature +20°C to +35°C Total Power Dissipation 1.2W Junction Temperature5 +150°C RF Input Power +26 dBm (5 min max) +23 dBm (continuous) DC Voltage at VDD +4.5V Current IDD 130 mA RF-IN 1 2, 3, 5, 7, 9, & Bottom of Die RF-OUT VDD1 VDD2 DUT Wideband Amplifier

50Ω 26 to 45 GHz Die Characterization Board VDD RF-IN 1 2, 3, 5, 7, 9, & Bottom of Die RF-OUT4 DUT Fig.1 Characterization & Application Circuit Note: This block diagram is used for characterization (Die is attached and wire-bonded on a die characterization test board). Gain, Return Loss, and Noise Figure are measured using Agilent’s N5245B PNA-X Microwave Network Analyzer. Conditions: 1. VDD = +3V 2. Gain and Return Loss PIN = -25 dBm CHARACTERIZATION AND APPLICATION CIRCUIT Component Size Value Part Number Manufacturer C1, C2 0402 0.1 µF GRM155R71C104KA88D Murata C3, C4 22x22mil 100pF MA4M3100 Macom Die Characterization Board VDD RF-IN 1 2, 3, 5, 7, 9, & Bottom of Die RF-OUT4 DUT ZVA-543+ 10 dB BW-V10-1W54+ VDD = +15V IDD Limit = 1.5A Fig.2 Characterization & Application Circuit with Pre-Amplifier Note: This block diagram is used for characterization (Die is attached and wire-bonded on a die characterization test board). Gain, Output Power at 1 dB Compression (P1dB), and Output IP3 (OIP3) are measured using Agilent’s N5245B PNA-X Microwave Network Analyzer. Conditions: 1. VDD = +3V 2. Gain PIN = -25 dBm 3. Output IP3 (OIP3): Two T ones, spaced 1 MHz apart, -5 dBm/T one at Output. Wideband Amplifier

50Ω 26 to 45 GHz ASSEMBLY DIAGRAM Dimension in µm, Typical Assembly Diagram Die Size Die ordering and packaging informaon Page 2 Gel- Pak Quanty Opons Paral Wafer, Maximum Quanty 86.0 Thick- ness 5, 10, 50,100 < 1100 100 1900 x 800 DIE MODEL MECHANICAL DRAWING L1 L2 L3 205.0 H1L4 L5 749.0 949.0 1150.0 1813.0 H2 H4 H5H3 355.0 505.0 704.0 800.0 80 x 100 Pad Size 1,2,3,4, 5 & 9 RF IN RF OUT C1 C2 GROUND Recommended gap of 76µm (3mils) between edge of die and edge of the ground pad 1900.0 100 x 100 Pad Size 6 & 8 100 x 110 Pad Size C C C3 C4 VDD C C C C 1. Storage Die should be stored in a dry nitrogen purged desiccators or equivalent. ESD MMIC pHEMT amplifier die are susceptible to electrostatic and mechanical damage. Die are supplied in anti-static protected material, which should be open in clean room conditions at an appropriately grounded anti-static workstation. 3. Die Handling and Attachment Devices need careful handling using correctly designed collets, it is recommended to handle the chip along the edges with a custom designed collet. The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are Ablestik 84-1 LMISR4 or equivalents. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s cure condition. The surface of the chip has exposed air bridges and should not be touched with vacuum collet, tweezers or fingers. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the Die gold bond pads. Thermo-sonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1mil diameter. Bonds must be made from the bond pads on the die to the packaged or substrate. All bond wire length and bond wire height should be kept as short as possible unless specified by the Assembly Drawing to minimize performance degradation due to undesirable series inductance. ASSEMBLY PROCEDURE NOTE: C1 & C2: 100pF Capacitor C3 & C4: 0.1 µF Capacitor Wideband Amplifier

50Ω 26 to 45 GHz MMIC Amplifier AVA-26453LN-D+ Typical Performance Curves 26000 29000 32000 35000 38000 41000 44000 GAIN (dB) FREQUENCY (MHz) GAIN vs. FREQUENCY & TEMPERATURE @ VDD = +3V -45°C +25°C +85°C 26000 29000 32000 35000 38000 41000 44000 GAIN (dB) FREQUENCY (MHz) GAIN vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.75V 3.00V 3.25V 45.0 50.0 55.0 60.0 65.0 26000 29000 32000 35000 38000 41000 44000 ISOLATION (dB) FREQUENCY (MHz) ISOLATION vs. FREQUENCY & TEMPERATURE @ VDD = +3V -45°C +25°C +85°C -14 -13 -12 -11 -10 26000 29000 32000 35000 38000 41000 44000 INPUT RETURN LOSS (dB) FREQUENCY (MHz) INPUT RETURN LOSS vs. FREQ. & TEMP. @ VDD = +3V -45°C +25°C +85°C -14 -13 -12 -11 -10 26000 29000 32000 35000 38000 41000 44000 INPUT RETURN LOSS (dB) FREQUENCY (MHz) INPUT RETURN LOSS vs. FREQ. & DEVICE VOLTAGE @ Temperature = +25°C 2.75V 3.00V 3.25V -18 -16 -14 -12 -10 26000 29000 32000 35000 38000 41000 44000 OUTPUT RETURN LOSS (dB) FREQUENCY (MHz) OUTPUT RETURN LOSS vs. FREQ. & TEMP. @ VDD = +3V -45°C +25°C +85°C -18 -16 -14 -12 -10 26000 29000 32000 35000 38000 41000 44000 OUTPUT RETURN LOSS (dB) FREQUENCY (MHz) OUTPUT RETURN LOSS vs. FREQ. & DEVICE VOLTAGE @ Temperature = +25°C 2.75V 3.00V 3.25V 26000 29000 32000 35000 38000 41000 44000 ISOLATION (dB) FREQUENCY (MHz) ISOLATION vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.75V 3.00V 3.25V REV. OR AVA-26453LN-D+ 11/8/2022 Page 1 of 2 TYPICAL PERFORMANCE CURVES Wideband Amplifier

50Ω 26 to 45 GHz TYPICAL PERFORMANCE CURVES MMIC Amplifier AVA-26453LN-D+ Typical Performance Curves 26000 29000 32000 35000 38000 41000 44000 P1dB (dBm) FREQUENCY (MHz) P1dB vs. FREQUENCY & TEMPERATURE VDD = +3V -45°C +25°C +85°C 26000 29000 32000 35000 38000 41000 44000 P1dB (dBm) FREQUENCY (MHz) P1dB vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.75V 3.00V 3.25V 26000 29000 32000 35000 38000 41000 44000 NOISE FIGURE (dB) FREQUENCY (MHz) NOISE FIGURE vs. FREQUENCY & TEMPERATURE VDD = +3V -45°C +25°C +85°C 0.0 1.0 2.0 3.0 4.0 5.0 26000 29000 32000 35000 38000 41000 44000 NOISE FIGURE (dB) FREQUENCY (MHz) NOISE FIGURE vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.75V 3.00V 3.25V 26000 29000 32000 35000 38000 41000 44000 OUTPUT IP3 (dBm) FREQUENCY (MHz) OUTPUT IP3 vs. FREQUENCY & TEMPERATURE @ VDD = +3V -45°C +25°C +85°C 26000 29000 32000 35000 38000 41000 44000 OUTPUT IP3 (dBm) FREQUENCY (MHz) OUTPUT IP3 vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.75V 3.00V 3.25V REV. OR AVA-26453LN-D+ 11/8/2022 Page 2 of 2 Wideband Amplifier

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard T erms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the standard. T erms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/terms/ viewterm.html D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and are provided as an accommodation and on an as is basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly, and processing of Known Good Die (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bonding and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Die. F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such third-party of Mini-Circuits or its products. MMIC DIE AVA-26453LN-D+ 50Ω 26 to 45 GHz Wideband Amplifier Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension (.zip file) Case Style Die Die Ordering and packaging information Quantity, Package Model No. Gel – Pak: 5, 10, 50, 100 Medium†, Partial wafer: KGD*<1100 Full Wafer AVA-26453LN-DG+ AVA-26453LN-DP+ AVA-26453LN-DF+ †Available upon request contact sales representative Refer to AN-60-067 Die Marking EL-AMP-10-5 Environmental Ratings ENV80 ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASHBOARD. *Known Good Die (‘KGD’) means that the die in question have been subjected to Mini-Circuits DC test performance criteria and measurement instructions and that the parametric data of such die fall within a predefined range. While DC testing is not definitive, it does provide a higher degree of confidence that die is capable of meeting typical RF electrical performance speci- fied by Mini-Circuits.