AV850M1-00 ALPHA | Alldatasheet

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Technical content

Features

I Balanced 0.25 µm MESFET Non-Reflective Design I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline AV850M1-00

Description

Alpha’s AV850M1-00 MMIC voltage variable attenuator is a balanced configuration incorporating Lange couplers at input and output.The attenuator has a typical insertion loss of 2.5 dB over the 18–40 GHz band with a worst-case insertion loss of 3.5 dB across the full 18–50 GHz band. The attenuation range is 35 dB over the full 18–50 GHz band while typical I/P and O/P return loss is better than 13 dB for all attenuation states. The chip uses Alpha’s proven 0.25 µm MESFET technology and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The MMICs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for insertion loss, full attenuation and I/P and O/P match over the 18–50 GHz band for guaranteed performance. Parameter Condition Symbol Min. Typ. 2 Max. Unit Maximum Attenuation V C = 0 V ISO 35 45 dB Minimum Attenuation V C = -5 V I L 2.5 3.5 dB Input Return Loss At Min. and Max. Attenuation RL I -20 -12.5 dB Output Return Loss At Min. and Max. Attenuation RL O -20 -12.5 dB Input Power at 1 dB Gain Compression P 1 dB 0 dBm (For All Attenuation Levels)1 Electrical Specifications at 25°C (Frequency = 18, 24, 31, 38, 43, 50 GHz) 0.000 0.000 1.634 0.095 0.320 2.000 1.080 1.400 0.365 1.305 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.Characteristic Value Operating Temperature (TC) -55 °C to +90°C Storage Temperature (TST) -65 °C to +150°C Control Voltage (VC)- 7 V DC Power In (PIN) 30 dBm Junction Temperature (TJ) 175 °C Absolute Maximum Ratings 1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip.

18–50 GHz GaAs MMIC Voltage Variable Attenuator AV850M1-00 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 2/00A Attenuation vs. Frequency (By State) Frequency (GHz) -70 Max. Min. 10 15 20 25 30 35 40 -60 -50 -40 -30 -20 -10 Attenuation (dB) Attenuation vs. Control Voltage Voltage (V) -70 -60 -50 -40 -30 -20 -10 Attenuation (dB) Insertion Loss vs. Frequency Frequency (GHz) 18 23 28 33 38 43 48 50 Insertion Loss (dB) Return Loss (dB) -45 -35 -40 -30 -25 -20 -15 -10 S21 S22 S11 15 20 25 301050 Attenuation (dB) Attenuation vs. 1.0 dB Compression PointPIN at 1.0 dB Compression (dBm) F = 30 GHz Typical Performance Data RF VC VC RF Bias Arrangement RF IN RF OUT VC VC Circuit Schematic Bias must be applied to both VC. Voltage range is VLow = 0 V to VHigh = -5 V. VLow corresponds to high attenuation state.