AV111-12 ALPHA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

I Attenuation 30 dB Typical I Good VSWR <1.5:1 Typical I Low Phase Shift AV111-12

Description

The AV111-12 is a current controlled variable attenuator from Alpha’s series of HIP3™ components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part. Parameter Min. Typ. Max. Unit Frequency 0.80 1.0 GHz Insertion Loss (0 mA Control Current) 1.0 1.5 dB Attenuation @ 1.2 mA Control Current (900 MHz) 17.5 21.5 dB VSWR All Ports 1.5 1.8 Input 3rd Order Intercept +37 +40 dBm Relative Phase Shift Up to 20 dB Attenuation 1 7 10 Deg. Group Delay 0.4 0.9 ns Electrical Specifications at 25°C Parameter2 Condition Frequency Min. Typ. Max. Unit Switching Characteristics3 Rise, Fall (10/90% or 90/10% RF) 5 µs On, Off (50% CTL to 90/10% RF) 8 µs Video Feedthru (Peak) 5 mV Maximum Input Power for <1 dB +15 dBm Attenuation Variation Operating Characteristics at 25°C (0, +5 V) 1. When built with external components as shown in the Pin Out diagram. 2. All measurements made in a 50 Ω system, unless otherwise specified. 3. 0–4 mA square wave total control current. SOIC-8 SOIC-8

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 6/01A HIP3™ Variable Attenuator 0.80–1.00 GHz AV111-12 VSWR Input/Output VSWR vs. Current Current (mA) 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70

800 MHz

900 MHz

1 GHz

Attenuation (dB) 0 0.5 1.0 1.5 2.0 Attenuation vs. Current -50 -40 -30 -20 -10 -45 -35 -25 -15 Current (mA)

1000 MHz

Relative Phase Shift (Degrees) Relative Phase vs. Frequency Frequency (GHz) 0.5 mA 0 mA 1.0 mA 1.2 mA 1.4 mA Attenuation (dB) Attenuation vs. Frequency -30 -25 -20 -15 -10 Frequency (GHz) 0 mA 0.1 mA 0.5 mA 0.9 mA 1.2 mA 1.4 mA Relative Phase vs. Attenuation -25 -20 -15 -10 Attenuation (dB) Relative Phase Shift (Degrees) -35 -30 -25 -20 -15 -10 -5 0 Current (mA) 400 600 700 900500 800 1000 Typical PIN Diode Current vs. Voltage 0.01 0.1 100 Voltage (V) Typical Performance Data

HIP3™ Variable Attenuator 0.80–1.00 GHz AV111-12 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 3 Specifications subject to change without notice. 6/01A Characteristic Value RF Input Power 0.5 W CW, 4 W @ 12.5% Duty Cycle Control Current 50 mA per Diode Operating Temperature -65 to +125 °C Storage Temperature -65 to +125 °C Maximum Reverse Diode Voltage -100 V Electrostatic Discharge +125 V Absolute Maximum Ratings Note: Operating this device above any of these parameters may cause irreversible damage. Recommended Board Layout RF In/OutRF In/Out 20 mil Diameter Ground Via Pin 1 22 nH Bias Input 120 pF 0.018 680 Ω SK38531 AV10✳-12 SOIC-8 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45˚ CHAMFER PIN 1 0.197 (5.00 mm) 0.189 (4.80 mm) 0.068 (1.73 mm) MAX. 0.010 (0.25 mm) 0.004 (0.10 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) MAX. 0.020 (0.51 mm) MAX. 0.244 (6.20 mm) 0.228 (5.80 mm) 0.050 (1.27 mm) BSCPIN 8 PIN 1 INDICATOR 1234CONTROL CURRENT GND 220 pF RF In GND 680 Ω 8765 GND 220 pF 100 nH 100 nH RF Out CONTROL CURRENT GND Pin Out CONTROL CURRENT CONTROL CURRENT RF OUT RF IN Connection Diagram Material is 10 mil FR4.