AV101-12 ALPHA | Alldatasheet

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Technical content

Features

I Attenuation 30 dB Typical I Good VSWR <1.5:1 Typical I Small SOIC-8 Package AV101-12

Description

The AV101-12 is a current controlled variable attenuator from Alpha’s series of HIP3™ components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part. Parameter Min. Typ. Max. Unit Frequency 0.80 1.00 GHz Insertion Loss (0 mA Control Current) 1 1.5 dB Attenuation @ 3.0 mA Control Current (900 MHz) 18.5 21.5 dB VSWR All Ports 1.5 1.8 Input 3rd Order Intercept +47 +50 dBm Group Delay 0.9 1.2 ns Electrical Specifications at 25°C SOIC-8 SOIC-8 Parameter1 Condition Frequency Min. Typ. Max. Unit Switching Characteristics2 Rise, Fall (10/90% or 90/10% RF) 5 µs On, Off (50% CTL to 90/10% RF) 8 µs Video Feedthru (Peak) 5 mV Maximum Input Power for <1 dB Attenuation Variation +15 dBm Operating Characteristics at 25°C (0, +5 V) 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. 0–4 mA square wave total control current.

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 6/01A HIP3™ Variable Attenuator 0.80–1.00 GHz AV101-12 VSWR (:1) Input/Output VSWR vs. Current @ 800 MHz 1.0 1.1 1.2 1.3 1.4 1.5 Current (Amps) Input Output VSWR (:1) Input/Output VSWR vs. Current @ 900 MHz 1.0 1.1 1.2 1.3 1.4 1.5 Current (Amps) Input Output Attenuation (dB) Attenuation vs. Current -70.0 -50.0 -60.0 -40.0 -30.0 -20.0 -10.0 0.0 Current (Amps)

800 MHz

900 MHz

1000 MHz

Attenuation (dB) Attenuation vs. Frequency -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) 0.0 mA 0.2 mA 0.9 mA 1.9 mA 2.8 mA 3.5 mA Input/Output VSWR vs. Current @ 1000 MHz 1.0 1.1 1.2 1.3 1.4 1.5 Current (Amps) Input Output VSWR (:1) Diode Current (mA) 400 600 800 1000 Typical PIN Diode Current vs. Voltage 0.01 0.1 Diode Voltage (mV) Typical Performance Data

HIP3™ Variable Attenuator 0.80–1.00 GHz AV101-12 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 3 Specifications subject to change without notice. 6/01A Characteristic Value RF Input Power 0.5 W CW, 4 W @ 12.5% Duty Cycle Control Current 50 mA per Diode Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Maximum Reverse Diode Voltage -10 V Electrostatic Discharge +125 V Absolute Maximum Ratings Note: Operating this device above any of these parameters may cause irreversible damage. Recommended Board Layout 0.1630 0.0200 DIA. VIA 4 PLACES 0.0190 TYP.0.0555 TYP. SOIC-8 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45˚ CHAMFER PIN 1 0.197 (5.00 mm) 0.189 (4.80 mm) 0.068 (1.73 mm) MAX. 0.010 (0.25 mm) 0.004 (0.10 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) MAX. 0.020 (0.51 mm) MAX. 0.244 (6.20 mm) 0.228 (5.80 mm) 0.050 (1.27 mm) BSCPIN 8 PIN 1 INDICATOR 1234CONTROL CURRENT GND 220 pF RF In GND 680 Ω 8765 GND 220 pF 100 nH 100 nH RF Out CONTROL CURRENT GND Pin Out CONTROL CURRENT CONTROL CURRENT RF OUT RF IN Connection Diagram Material is 10 mil FR4.