DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Reverse recovery time t rr=60ns(typ.) • ON-resistance R DS(on)=1.55Ω(typ.)
  • Input Capacitance Ciss=350pF(typ.) • 10V drive
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 500 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 5.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 19 A Source-to-Drain Diode Forward Current (DC) IS 5.5 A Source-to-Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% 19 A Allowable Power Dissipation P D Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 93 mJ Avalanche Current *2 I AV 5.5 A Note : *1 VDD=99V , L=5mH, IAV=5.5A (Fig.1) *2 L≤5mH, Single pulse Package Dimensions unit : mm (typ) 7057-001 Product & Package Information
  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP613 LOT No. 2,4

No. A1903-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=2.75A 1.5 2.9 S Static Drain-to-Source On-State Resistance RDS(on) I D=2.75A, VGS=10V 1.55 2.0 Ω Input Capacitance Ciss VDS=30V, f=1MHz 350 pF Output Capacitance Coss 68 pF Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time td(on) See Fig.2 14.2 ns Rise Time tr 46 ns Turn-OFF Delay Time td(off) 37.6 ns Fall Time tf 20.4 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=5.5A 13.8 nC Gate-to-Source Charge Qgs 3.2 nC Gate-to-Drain “Miller” Charge Qgd 7.6 nC Diode Forward Voltage VSD IS=5.5A, VGS=0V 1.1 1.5 V Reverse Recovery Time trr See Fig.3 IS=5.5A, VGS=0V, di/dt=100A/μs 60 ns Reverse Recovery Charge Qrr 120 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device Package Shipping memo ATP613-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free 50Ω ≥50Ω RG VDD L 10V ATP613 G S D P. G 50Ω G S D ID=2.75A RL=71Ω VDD=200V VOUT ATP613 VIN PW≤10μs D.C.≤1% 10V VIN VDD=50V ATP613 500μH Driver MOSFET G S D

No. A1903-3/7 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Tc IS -- VSD SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS VDS=20V IT16201 IT16202 01 2 100 2026 1 2 48 1 6 1410 18 624 8 VGS=5V --25 Tc=75 Tc=25°C 10V 15V Tc= --25 25°C 75°C 05 0 3530 40 45151052 0 2 5 IT16208IT16207 IT16206 0.01 IT16205 --25 f=1MHz Coss Crss Tc=75 0.01 0.1 223 5 2357 1.035 7 107 100 1000 0.1 1.0 723 5 10 VDD=200V VGS=10V td(off) tf td(on) tr IT16203 5.0 152 4 6 8 1 01 21 4 4.5 3.0 4.0 3.5 0.5 1.0 2.5 2.0 1.5 ID=2.75A Single pulse Tc=75°C --25°C 0.1 23 5 7 Ciss Tc= --25 75°C 25°C 0.1 0.01 1.0 1.0 100 100 1000 25°C VDS=10V IT16204 --50 --25 0 25 50 75 100 125 150 5.0 3.5 1.5 0.5 4.5 3.0 2.5 4.0 2.0 1.0 VGS=10V , I D=2.75A Single pulse VGS=0V Single pulse

No. A1903-4/7 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT16212 PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT16211 20 40 60 80 100 140 120 160 IT16209 1614121024 8 6 VDS=200V ID=5.5A IT16935 0.01 0.1 1.0 1.0 ID=5.5A 100 μs1ms10ms 100msDC operation Operation in this area is limited by RDS(on). 1023 5 7 2 10035 7 2 3 7 5 10μs IDP=19A (PW≤10μs) Tc=25°C Single pulse

No. A1903-5/7 Taping Specifi cation ATP613-TL-H

No. A1903-6/7 Outline Drawing Land Pattern Example ATP613-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No. A1903-7/7 Note on usage : Since the ATP613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.