ATP602

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Document overview

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Technical content

Features

• ON-resistance R DS(on)=2.1Ω (typ.) • Input capacitance Ciss=350pF (typ.)
• 10V drive • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 5A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 15 A Allowable Power Dissipation P D Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 74 mJ Avalanche Current *2 I AV 5A Note : *1 VDD=99V , L=5mH, IAV=5A (Fig.1) *2 L≤5mH, Single pulse Package Dimensions unit : mm (typ) 7057-001 Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP602 LOT No. 2,4

No. A1543-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS V DS=480V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3 5 V Forward Transfer Admittance | yfs | V DS=10V, ID=2.5A 1.5 2.9 S Static Drain-to-Source On-State Resistance RDS(on) I D=2.5A, VGS=10V 2.1 2.7 Ω Input Capacitance Ciss VDS=30V, f=1MHz 350 pF Output Capacitance Coss 68 pF Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time td(on) See Fig.2 14.2 ns Rise Time tr 37.4 ns Turn-OFF Delay Time td(off) 36.2 ns Fall Time tf 20.4 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=5A 13.6 nC Gate-to-Source Charge Qgs 3.4 nC Gate-to-Drain “Miller” Charge Qgd 7.2 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.9 1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ATP602-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free P. G RGS=50Ω G S ID=2.5A RL=80Ω VDD=200V VOUT ATP602 D PW=10μs D.C.≤0.5% VIN 10V VIN 50Ω ≥50Ω RG VDD L 10V ATP602

No. A1543-3/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Forward Transfer Admittance, | yfs | -- S IT14903 IT14900 --50 --25 150 0 25 50 75 100 125 25°C 75°C Tc= --25°C --25°C 25°C Tc=75°C 841 2 1 6 2 0 18621 0 1 40 IT14902 6789 1 0 1 5 11 12 13 145 IT14901 642 8 10 20 12 14 16 180 Tc=25°C VGS=5V 15V VDS=20V VGS =10V , I D=2.5A 10V IT14904 0.1 23 5 7 1.0 21.0 37 5 Tc= --25 25°C 75°C VDS=10V IT14905 0.01 0.1 1.0 Tc=75 --25 ID=2.5A Single pulse Single pulse VGS=0V Single pulse 0.1 1.0 223 5 7 3 7 5 100 IT14906 td(off) td(on) VDD=200V VGS=10V tf tr IT14907 02 0 10 30 100 1000 f=1MHz 605040 Ciss Crss Coss Ciss, Coss, Crss -- pF

No. A1543-4/7 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Tc EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT10478 IT16934 0.01 0.1 1.0 1.0 10μs100 μs 100ms10ms 1ms DC operation 10 100 100023 5 7 23 5 7 7 23 5 01 6 1481 246 1 02 IT14908 ID=5A VDS=200V ID=5A Operation in this area is limited by RDS(on). IDP=15A (PW≤10μs) 20 40 60 80 100 140 120 160 IT14910 Tc=25°C Single pulse

No. A1543-5/7 Taping Specifi cation ATP602-TL-H

No. A1543-6/7 Outline Drawing Land Pattern Example ATP602-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No. A1543-7/7 Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.