ATP304

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Document overview

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Technical content

Features

• On-resistance RDS(on)1=5.0mΩ(typ.) • 4.5V drive
• Input Capacitance Ciss=13000pF(typ.) • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS -60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D -100 A Drain Current (Pulse) I DP PW ≤10μs, duty cycle≤1% -400 A Allowable Power Dissipation P D Tc=25 °C 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg - 55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 656 mJ Avalanche Current *2 I AV -75 A Note : *1 VDD=-36V, L=100μH, IAV=-75A *2 L ≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Oper ating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Device Package Shipping note ATP304-TL-H ATPAK 3,000 pcs. / reel Pb-Free and Halogen-Free Packing Type: TL Marking Electrical Connection ATPAK 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 1: Gate 2: Drain 3: Source 4: Drain ATP304-TL-H TL ATP304 LOT No. 2,4

No.A2192-2/6 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V( BR)DSS I D=-1mA, VGS=0V -60 V Zero-Gate Voltage Drain Current I DSS V DS=-60V, VGS=0V -10 μA Gate to Source Leakage Current I GSS V GS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=-10V, ID=-1mA -1.2 -2.6 V Forward Transfer Admittance | yfs | V DS=-10V, ID=-50A 100 S Static Drain to Source On-State Resistance RDS(on)1 I D=-50A, VGS=-10V 5.0 6.5 m Ω RDS(on)2 I D=-50A, VGS=-4.5V 6.4 8.9 m Ω Input Capacitance Ciss VDS=-20V, f=1MHz 13000 pF Output Capacitance Coss 1080 pF Reverse Transfer Capacitance Crss 760 pF Turn-ON Delay Time td(on) See Fig.2 80 ns Rise Time tr 650 ns Turn-OFF Delay Time td(off) 780 ns Fall Time tf 460 ns Total Gate Charge Qg VDS=-36V, VGS=-10V, ID=-100A 250 nC Gate to Source Charge Qgs 55 nC Gate to Drain “Miller” Charge Qgd 50 nC Diode Forward Voltage VSD I S=-100A, VGS=0V -1.0 -1.5 V Reverse Recoverry Time trr See Fig.3 IS=-100A, VGS= 0V, di/dt=--100A/μs 90 ns Reverse Recoverry Charge Qrr 245 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit VDD A TP304 L Driver MOSFET G S D

No.A2192-3/6

No.A2192-4/6

No.A2192-5/6 Outline Drawing Land Pattern Example ATP304-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No.A2192-6/6 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s techn ical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC productsfor any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, anddistributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture oft h e part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Note on usage : Since the ATP304 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.