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Technical content

Features

  • Low ON-resistance • Large current
  • 4.5V drive • Slim package
  • Halogen free compliance • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 65 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 195 A Allowable Power Dissipation P D Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 35 mJ Avalanche Current *2 I AV 33 A Note : *1 VDD=10V , L=50μH, IAV=33A *2 L≤50μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 Product & Package Information
  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP207 LOT No. 2,4

No. A1319-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 40 V Zero-Gate Voltage Drain Current I DSS V DS=40V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.5 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=33A 12 20 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=33A, VGS=10V 7 9.1 m Ω RDS(on)2 I D=17A, VGS=4.5V 11 15.5 m Ω Input Capacitance Ciss VDS=20V, f=1MHz 2710 pF Output Capacitance Coss 330 pF Reverse Transfer Capacitance Crss 220 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 27 ns Rise Time tr 290 ns Turn-OFF Delay Time td(off) 170 ns Fall Time tf 110 ns Total Gate Charge Qg VDS=20V, VGS=10V, ID=65A 54 nC Gate-to-Source Charge Qgs 14 nC Gate-to-Drain “Miller” Charge Qgd 11 nC Diode Forward Voltage VSD IS=65A, VGS=0V 1.0 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ATP207-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=33A RL=0.61Ω VDD=20V VOUT ATP207 VIN 10V VIN

No. A1319-3/7 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS 10075 100 1000 405 1 52 02 53 03 510 IT14030IT14029 IT14028 0.001 0.0175 IT14027 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 23 5 723 5 7 5 10 100 723 1.0 Tc= --25 75°C 1000 100 0.1 1.0 23 5 7723 5 100 VDD=20V VGS=10V td(off) tf td(on) tr IT14025 IT14026 162468 1 0 1 2 --60 --40 --20 0 20 40 60 80 100 120 140 16014 ID=17A 33A IT14023 IT14024 0 6.0 1.50 100 2.00.5 1.0 1.5 100 4.0V 4.5V VGS=3.5V --25 25°C Tc=75 6.0V 0.175 1.075 1075 10 23 5 7 16.0V Ciss 8.0V 10.0V VGS=4.5V , I D=17A VGS=10.0V , ID=33A 25°C Tc=25°C Single pulse Tc=25°C Single pulse VDS=10V Single pulse Single pulse VGS=0V Single pulse VDS=0V Single pulse

No. A1319-4/7 A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C IT14010 20 40 60 80 100 120 140 160 0.1 1.0 223 5 7 23 5 70.1 1.0 35 7 10 IT14032IT14031 6030 40 5020 10VDS=20V ID=65A Operation in this area is limited by RDS(on). 100 μs ID=65A IDP=195A DC operation 1ms 10ms100ms 25 50 75 100 125 150 100 120 175 IT14011 100 PW≤10μs 10μs Tc=25°C Single pulse

No. A1319-5/7 Taping Specifi cation ATP207-TL-H

No. A1319-6/7 Outline Drawing Land Pattern Example ATP207-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No. A1319-7/7 Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.