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Technical content

Features

  • Low ON-resistance • 4.5V drive
  • Slim package • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 35 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 105 A Allowable Power Dissipation P D Tc=25°C3 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 10 mJ Avalanche Current *2 I AV 18 A Note : *1 VDD=10V , L=50μH, IAV=18A *2 L≤50μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 Product & Package Information
  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP201 LOT No. 2,4

No. A1547-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=18A 24 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=18A, VGS=10V 13 17 m Ω RDS(on)2 I D=9A, VGS=4.5V 23 33 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 985 pF Output Capacitance Coss 180 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 10 ns Rise Time tr 230 ns Turn-OFF Delay Time td(off) 51 ns Fall Time tf 39 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=35A 17 nC Gate-to-Source Charge Qgs 4.7 nC Gate-to-Drain “Miller” Charge Qgd 2.8 nC Diode Forward Voltage VSD IS=35A, VGS=0V 0.97 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ATP201-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=18A RL=0.83Ω VDD=15V VOUT ATP201 VIN 10V VIN

No. A1547-3/7 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14959 IT14962 --60 --40 --20 160 03 0 10 15 20 255 100 IT14966 IT14964IT14963 0.1 1.0 23 5 7 23 5 7 23 5 1.0 0.001 0.01 0.1 1.0 100 1000 04 0 20 60 80 100 120 140 °CTc= --25 --25 °CTc=75 Tc=25°C Single pulse Single pulse Tc= - -25 25°C 75°C Tc=75 --25 VGS=0V Single pulse Ciss Crss IT14965 0.1 7 1.023 5 7 23 527 1035 100 1000 td(off) VDD=15V VGS=10V f=1MHz tr IT14961 246 79 1 1 1 6 13 1535 8 1 0 1 2 1 4 IT14960 4.5V VGS=4.0V .0V 6.0V VDS=10V Single pulse VDS=10V Single pulse tf 25°C VGS=4.5V , I D=9A VGS=10.0V , ID=18A 10.0V Coss td(on) 8.0V ID=9A 18A Tc=25°C Single pulse

No. A1547-4/7 A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT14011 IT14968 0.1 1.0 0.1 IDP=105A ID=35A 100 μs 1ms 10ms 100ms DC operation Tc=25°C Single pulse IT14967 04 1 6 12 20821 4 1 8 106 VDS=15V ID=35A 1.023 5 7 2 1035 7 2 20 40 60 80 100 120 140 160 IT14969 10μs 100 Operation in this area is limited by RDS(on). PW≤10μs

No. A1547-5/7 Taping Specifi cation ATP201-TL-H

No. A1547-6/7 Outline Drawing Land Pattern Example ATP201-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No. A1547-7/7 Note on usage : Since the ATP201 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.