DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • ON-resistance R DS(on)1=33mΩ(typ.) • Input Capacitance Ciss=1450pF(typ.)
  • 4V drive • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -25 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -75 A Allowable Power Dissipation P D Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 50 mJ Avalanche Current *2 I AV - -13 A Note : *1 VDD=--10V , L=500μH, IAV=--13A *2 L≤500μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 Product & Package Information
  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP112 LOT No. 2,4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 ATP112-TL-H

No. A1754-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -60 V Zero-Gate Voltage Drain Current I DSS V DS=--60V, VGS=0V -- 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=- -13A 24 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=--13A, VGS=--10V 33 43 mΩ RDS(on)2 I D=--7A, VGS=--4.5V 42 59 mΩ RDS(on)3 I D=--3.5A, VGS=--4V 45 63 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 1450 pF Output Capacitance Coss 155 pF Reverse Transfer Capacitance Crss 125 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 10 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 150 ns Fall Time tf 120 ns Total Gate Charge Qg VDS=- -30V, VGS=- -10V, ID=- -25A 33.5 nC Gate-to-Source Charge Qgs 5.3 nC Gate-to-Drain “Miller” Charge Qgd 7.9 nC Diode Forward Voltage VSD IS=- -25A, VGS=0V - -0.97 - -1.5 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ATP112-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=13A RL=2.3Ω VDD= --30V VOUT VIN --10V VIN ATP112

No. A1754-3/7 IT15590 °CTc= --25 --25 °CTc=75 --5 --25 --15 --20 --10 --10 --30 --20 --40 --50 --60 IT15591 --3.0V VGS= --2.5V --16.0V --3.5V --10.0V VDS= --10V Single pulse --8.0V --6.0V --4.5V --4.0V 25°C ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Tc=25°C Single pulse IT15593 1000 100 IT15597 IT15595 --0.001 --0.01 --0.1 --1.0 --10 --100 Tc=75 --25 VGS=0V Single pulse Ciss Crss IT15596 100 td(off) VDD= --30V VGS= --10V tr IT15592 tf Coss td(on) Tc=25°C Single pulse ID= --13A --3.5A --7A IT15594 --0.1 --1.0 1.0 2 --1035 723 5 7 5 23 Tc= --25 25°C 75°C VDS= --10V Single pulse f=1MHz --50 --25 150 0 25 50 75 100 125 Single pulse VGS = --4.5V , I D= --7A VGS = --4.0V , I D= --3.5A VGS= --10.0V , I D= --13A | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IS -- VSD

No. A1754-4/7 IT15599IT15598 0 5 10 15 20 40 25 30 35 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 --0.1 --1.0 --10 --0.1 IDP= --75A (PW≤10μs) ID= --25A 100 μs 1ms 10ms 100ms DC operation Operation in this area is limited by RDS(on). --1.023 5 7 23 5 7 23 5 7 --10 --100 10μs --100 VDS= --30V ID= --25A VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse IT15600 25 50 75 100 125 150 100 120 175 IT15179 20 40 60 80 100 140 120 160 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C

No. A1754-5/7 Taping Specifi cation ATP112-TL-H

No. A1754-6/7 Outline Drawing Land Pattern Example ATP112-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No. A1754-7/7 Note on usage : Since the ATP112 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.