ATGH40N120F2DR TRINNO | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Features
- 1200V Field Stop Trench IGBT Technology
- AEC-Q101 Qualified
- High Speed Switching
- Low Conduction Loss
- Positive Temperature Coefficient
- Easy Parallel Operation
- 175℃ Operating Temperature
- Short Circuit Withstanding Time 5μs
- RoHS Compliant
- JEDEC Qualification
Applications
PTC heater, Motor drive inverter, Compressor Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature, During production, high current switching capability is 100% verified with the inductive load single-pulse switching test. (Ic=120A) (2) Repetitive rating : Pulse width limited by maximum junction temperature. TO-247 G C E
www.trinnotech.com 2/9September 2022. Rev 0.0.0 Field Stop Trench IGBT ATGH40N120F2DR Electrical Characteristics of the IGBT Tvj=25℃, unless otherwise noted Parameter Symbol Test condition Min. Typ. Max. Unit OFF Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 1200 -- -- V Zero Gate Voltage Collector Current ICES VCE = 1200V, VGE = 0V -- -- 1 mA Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ± 25V -- -- ± 500 nA Integrated Gate Resistance RG(int) f = 1MHz, Open Collector -- 3.3 -- Ω ON Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 40mA 5.0 6.5 8.0 V Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 40A, Tvj = 25 ℃ -- 1.80 2.30 V VGE = 15V, IC = 40A, Tvj = 125 ℃ -- 2.19 -- V VGE = 15V, IC = 40A, Tvj = 175 ℃ -- 2.40 -- V DYNAMIC Input Capacitance CIES VCE = 30V VGE = 0V f = 1MHz -- 2443 -- pF Output Capacitance COES -- 88 -- pF Reverse Transfer Capacitance CRES -- 20 -- pF Total Gate Charge Qg VCC = 600V, IC = 40A VGE = 15V -- 107 160 nC Gate-Emitter Charge Qge -- 14 21 nC Gate-Collector Charge Qgc -- 61 91 nC SWITCHING (Note 3) Turn-On Delay Time td(on) VCC = 600V, IC = 20A RG = 5Ω, VGE = 15V Inductive Load, Tvj = 25 ℃ -- 28 -- ns Rise Time tr -- 22 -- ns Turn-Off Delay Time td(off) -- 200 -- ns Fall Time tf -- 70 -- ns Turn-On Switching Loss EON -- 1.75 -- mJ Turn-Off Switching Loss EOFF -- 0.94 -- mJ Total Switching Loss ETS -- 2.69 -- mJ Turn-On Delay Time td(on) VCC = 600V, IC = 40A RG = 5Ω, VGE = 15V Inductive Load, Tvj = 25 ℃ -- 31 -- ns Rise Time tr -- 54 -- ns Turn-Off Delay Time td(off) -- 162 -- ns Fall Time tf -- 121 -- ns Turn-On Switching Loss EON -- 3.97 5.96 mJ Turn-Off Switching Loss EOFF -- 1.83 2.74 mJ Total Switching Loss ETS -- 5.80 8.70 mJ
www.trinnotech.com 3/9September 2022. Rev 0.0.0 Field Stop Trench IGBT ATGH40N120F2DR Parameter Symbol Test condition Min. Typ. Max. Unit SWITCHING (Note 3) Turn-On Delay Time td(on) VCC = 600V, IC = 20A RG = 5Ω, VGE = 15V Inductive Load, Tvj = 175 ℃ -- 26 -- ns Rise Time tr -- 24 -- ns Turn-Off Delay Time td(off) -- 239 -- ns Fall Time tf -- 257 -- ns Turn-On Switching Loss EON -- 2.51 -- mJ Turn-Off Switching Loss EOFF -- 1.85 -- mJ Total Switching Loss ETS -- 4.36 -- mJ Turn-On Delay Time td(on) VCC = 600V, IC = 40A RG = 5Ω, VGE = 15V Inductive Load, Tvj = 175 ℃ -- 31 -- ns Rise Time tr -- 58 -- ns Turn-Off Delay Time td(off) -- 214 -- ns Fall Time tf -- 324 -- ns Turn-On Switching Loss EON -- 5.23 7.85 mJ Turn-Off Switching Loss EOFF -- 3.68 5.52 mJ Total Switching Loss ETS -- 8.91 13.37 mJ Short Circuit Withstanding Time tSC VCC = 600V, VGE = 15V, Tvj = 125℃ 5 10 -- μs Electrical Characteristics of the IGBT Tvj=25℃, unless otherwise noted Notes : (3) Not subject to production test – verified by design/characterization
www.trinnotech.com 4/9September 2022. Rev 0.0.0 Field Stop Trench IGBT ATGH40N120F2DR Parameter Symbol Test condition Min. Typ. Max. Unit Diode Forward Voltage VFM Reverse Recovery Time trr IF = 20A, di/dt = 200A/µs, Tvj = 25 ℃ -- 186 -- ns Reverse Recovery Current Irr -- 13.3 -- A Reverse Recovery Charge Qrr -- 1640 -- nC Reverse Recovery Time trr IF = 20A, di/dt = 200A/µs, Tvj = 175 ℃ -- 275 -- ns Reverse Recovery Current Irr -- 17.8 -- A Reverse Recovery Charge Qrr -- 3835 -- nC Reverse Recovery Time trr IF = 40A, di/dt = 200A/µs, Tvj = 25 ℃ -- 230 -- ns Reverse Recovery Current Irr -- 14.2 -- A Reverse Recovery Charge Qrr -- 2280 -- nC Reverse Recovery Time trr IF = 40A, di/dt = 200A/µs, Tvj = 175 ℃ -- 353 -- ns Reverse Recovery Current Irr -- 20.3 -- A Reverse Recovery Charge Qrr -- 5000 -- nC Electrical Characteristics of the DIODE Tvj=25℃, unless otherwise noted
0.1 1 10 100 1000 10000 Tvj = 25 o C Common Emitter VGE= 0V, f = 1MHz CRES COES Capacitance [pF] Collector - Emitter Voltage, VCE [V] CIES 0 2 4 6 8 10 12 14 16 18 20 Tvj = 175 o C 80A40A Collector - Emitter Voltage, VCE [V] Gate - Emitter Voltage, VGE [V] I C = 20A 0 2 4 6 8 10 12 14 16 18 20 Tvj = 25 o C 80A40A Collector - Emitter Voltage, VCE [V] Gate - Emitter Voltage, VGE [V] IC = 20A 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Junction Temperature, Tvj [ o IC = 80A IC = 40A Collector - Emitter Voltage, VCE[V] VGE = 15V IC = 20A 0 1 2 3 4 5 6 7 8 9 10 100 120 VGE= 15V Tvj = 25 o C Tvj = 175 o C Collector Current, IC [A] Collector - Emitter Voltage, VCE [V] 0 1 2 3 4 5 6 7 8 100 120 Tvj = 25 o C 17 V VGE = 20 V 15 V 12 V 10 V 8 V Collector Current, IC [A] Collector - Emitter Voltage, VCE [V] IGBT Characteristics Fig. 1 IGBT Output Characteristics Fig. 2 IGBT Output Characteristics Fig. 3 IGBT Saturation Voltage vs. Junction Temperature Fig. 5 IGBT Saturation Voltage vs. Gate Bias Fig. 4 IGBT Saturation Voltage vs. Gate Bias Fig. 6 IGBT Capacitance Characteristics
Tvj = 25 o C Tvj = 175 o C Collector Current, IC [A] EON Switching Energy [J] EOFF Common Emitter VCC = 600V, VGE = 15V, RG= 5Ω 0 20 40 60 80 100 100 1000 Tvj = 25 o C Tvj = 175 o C Switching Time [ns] Collector Current, IC [A] Common Emitter VCC = 600V, VGE = 15V, RG= 5Ω td(off) tf 0 20 40 60 80 100 100 Tvj = 25 o C Tvj = 175 o C td(on) Switching Time [ns] Collector Current, IC [A] tr Common Emitter VCC = 600V, VGE = 15V, RG= 5Ω 0 10 20 30 40 50 60 70 1000 10000 Tvj = 25 o C Tvj = 175 o C Switching Energy [J] Gate Resistor, RG [Ω] Common Emitter VCC = 600V, VGE = 15V, IC= 40A EOFF EON 0 10 20 30 40 50 60 70 100 1000 Tvj = 25 o C Tvj = 175 o C Common Emitter VCC = 600V, VGE = 15V, IC= 40A td(off) Switching Time [ns] Gate Resistor, RG [Ω] tf 0 10 20 30 40 50 60 70 100 Tvj = 25 o C Tvj = 175 o C Common Emitter VCC = 600V, VGE = 15V, IC= 40A td(on) Switching Time [ns] Gate Resistor, RG [Ω] tr IGBT Characteristics Fig. 7 Turn-on Time vs. Gate Resistor Fig. 8 Turn-off Time vs. Gate Resistor Fig. 9 Switching Loss vs. Gate Resistor Fig. 11 Turn-off Time vs. Collector Current Fig. 10 Turn-on Time vs. Collector Current Fig. 12 Switching Loss vs. Collector Current
Tvj = 25 o C Gate-Emitter Voltage, VGE [V] Gate Charge, Qg [nC] Common Emitter IC = 40A, Resistive Load VCE = 600V 300V 400V 10 100 1k 10k 100 120 140 Square Wave Tvj ≤ 175 o C, D = 0.5, VCE = 600V VGE = 15V, RG = 5 Collector Current, IC [A] Switching Frequency, f [Hz] Tc = 75 o C Tc = 100 o C 1 10 100 1000 100 VGE = 15V, Tvj = 175 o C Collector Current, IC [A] Collector - Emitter Voltage, VCE [V] Duty = 0.5 0.1 0.2 0.05 0.01 0.02 Thermal Response [Zthjc] Rectangular Pulse Width [sec] single pulse 1 10 100 1000 0.01 0.1 100 50s 100s 500s 1ms DC operation IC Max. (pulsed) Collector Current, IC [A] Collector - Emitter Voltage, VCE [V] IC Max. (continuous) Fig. 13 Gate Charge Characteristics Fig. 14 SOA Fig. 15 RBSOA Fig. 17 Load Current vs. Frequency Fig. 16 Transient Thermal Impedance of IGBT IGBT Characteristics
Tvj = 25 o C Tvj = 175 o C Forward Current, IF [A] Forward Voltage, VF [V] Diode Characteristics Fig. 18 Diode Conduction Characteristics Fig. 19 Reverse Recovery Current vs. Forward Current Fig. 20 Reverse Recovery Charge vs. Forward Current Fig. 21 Reverse Recovery Time vs. Forward Current 0 20 40 60 80 100 1000 2000 3000 4000 5000 Tvj = 25 oC di/dt = 100A/s Reverse Recovery Charge, Qrr [nC] Forward Current, IF [A] di/dt = 200A/s 0 20 40 60 80 100 Tvj = 25 oC di/dt = 100A/s Reverse Recovery Current, Irr [A] Forward Current, IF [A] di/dt = 200A/s 0 20 40 60 80 100 100 200 300 400 500 600 Tvj = 25 oC di/dt = 100A/s Reverse Recovery Time, trr [ns] Forward Current, IF [A] di/dt = 200A/s
www.trinnotech.com 9/9September 2022. Rev 0.0.0 Field Stop Trench IGBT ATGH40N120F2DR TO-247 MECHANICAL DATA Disclaimer TRinno technology reserves the right to make changes without notice to products herein to improve reliability, performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device, TRinno technology hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent rights of any third party. symbol mm MIN MAX A 4.80 5.21 A1 2.21 2.59 A2 1.85 2.16 b 1.07 1.40 b1 1.91 2.41 b2 2.87 3.38 c 0.51 0.80 D 20.80 21.34 D1 17.20 18.90 E 15.50 16.13 E1 12.38 13.60 E2 3.68 5.20 e 5.44 5.45 L 19.62 20.57 L1 3.81 4.40 ΦP 3.40 3.80 Q 5.49 6.20 S 6.04 6.30