ATF38143 HP | Alldatasheet
Document overview
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Technical content
Features
- Low Noise Figure
- Excellent Uniformity in Product Specifications
- Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70)
- Tape-and-Reel Packaging Option Available Specifications 1.9 GHz; 2V, 10 mA (Typ.)
- 0.4 dB Noise Figure
- 16 dB Associated Gain
- 12.0 dBm Output Power at 1␣ dB Gain Compression
- 22.0 dBm Output 3 rd Order Intercept
Applications
- Low Noise Amplifier for Cellular/PCS Handsets
- LNA for WLAN, WLL/RLL, LEO, and MMDS
- General Purpose Discrete PHEMT for Other Ultra Low Noise Applications Surface Mount Package SOT-343
Description
Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured perfor- mance, ATF-38143 is suitable for applications in cellular and PCS handsets, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 450␣ MHz to 10␣ GHz frequency range. Pin Connections and Package Marking GATE 8PxSOURCE DRAIN SOURCE Note: Top View. Package marking provides orientation and identification. “8P” = Device code “x” = Date code character. A new character is assigned for each month, year. 1.+ 2001.04.26, 9:18 AMPage 1 "EPCF1BHF.BLFS+11$
- Operation of this device above any one
- Source lead temperature is 25 °C.
Derate 6␣ mW/ °C for TL > 64°C.
- Thermal resistance measured using
samples taken from 6 different wafers. the upper and lower spec limits. embedded from actual measurements. Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
6 Wafers
Figure 3. NF @ 2 GHz, 2 V, 10 mA. Figure 4. Gain @ 2 GHz, 2 V, 10 mA. Figure 1. Typical I-V Curves.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure- board requirements. Circuit losses have been de-embedded from actual measurements.
50 Ohm
Symbol Parameters and Test Conditions Units Min. Typ. [2] Max.
- Guaranteed at wafer probe level.
- Typical value determined from a sample size of 450 parts from 6 wafers.
- Measurements obtained using production test board described in Figure 5.
Figure 18. MSG/MAG and |S21|2 vs.
- F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 19. MSG/MAG and |S21|2 vs.
- F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 20. MSG/MAG and |S21|2 vs.
- F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Fmin values at 2␣ GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true F min is calculated. Fmin represents the true minimum noise figure of the device when the device is pre- sented with an impedance matching network that trans- forms the source impedance, typically 50W , to an impedance represented by the reflection coefficient G o. The designer must design a matching network that will present G o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to F min only when the device is presented with Go. If the reflec- tion coefficient of the matching network is other than G o, then the noise figure of the device will be greater than F min based on the following equation. NF = Fmin + 4 Rn |Gs – Go | 2 Where Rn/Zo is the normalized noise resistance, Go is the opti- mum reflection coefficient required to produce F min and Gs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. G o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower G o as compared to narrower gate width devices. Typically for FETs, the higher Go usually infers that an impedance much higher than 50W is required for the device to produce F min. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high imped- ance requires very hi-Q compo- nents in order to minimize circuit losses. As an example at 900 MHz, when air-wound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muilti-layer molded inductors with Qs in the 30 to 50 range results in additional loss over the air-wound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB F min of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085. 1.+ 2001.04.26, 9:18 AMPage 9 "EPCF1BHF.BLFS+11$
ATF-38143 SC70 4 Lead, High Frequency Nonlinear Model NFET=yes PFET=no Vto=–0.75 Beta=0.3 Lambda=0.07 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1= Delta2= Gscap=3 Cgs=0.997 pF Gdcap=3 Cgd=0.176 pF Rgd=0.195 Tqm= Vmax= Fc= Rd=0.084 Rg=0.264 Rs=0.054 Ld=0.0014 nH Lg-0.0883 nH Ls=0.001 nH Cds=0.0911 pF Crf=0.0936 Rc=137 Gsfwd=1 Gsrev=0 Gdfwd=1 Gdrev=0 Vjr=1 Is=1 nA Ir=1 nA Imax=0.1 Xti= Eg= Vbr= Vtotc= Rin= Taumd1=no Fnc=1E6 R=0.17 C=0.2 P=1 wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= All Params= Statz Model MESFETM1 GATE SOURCE Port G Num=1 Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.2 nH R=0.001 C C=0.11 pF L C=0.6 nH R=0.001MSub TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 VIA2 D=20 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40 mil VIA2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 VAR VAR1 K=5 Z2=85 Z1=30 Var Ean TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL8 Z=Z1 Ohm L=15 mil K=1 A=0.0000 F=1 GHz TanD=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL6 Z=Z1 Ohm L=15 mil K=1 A=0.0000 F=1 GHz TanD=0.001 VIA2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil VIA2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil L L=0.6 nH R=0.001 L L=0.2 nH R=0.001 GaAsFET FET1 Model= MESFETN1 Mode= nonlinear MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+0.34 mil T=0.15 mil TanD=0 Rough=0 mil The vias are not part of the model as such. They are only included to account for the source vias in the test fixture. 1.+ 2001.04.26, 9:18 AMPage 10 "EPCF1BHF.BLFS+11$
Part Number Ordering Information No. of Part Number Devices Container ATF-38143-TR1 3000 7" Reel ATF-38143-TR2 10000 13" Reel ATF-38143-BLK 100 antistatic bag Package Dimensions Outline 43 (SOT-343/SC-70 4 lead) E D A A1b TYP e 1.30 (0.051) BSC 1.15 (.045) BSC q h C TYPL DIMENSIONS ARE IN MILLIMETERS (INCHES) DIMENSIONS MIN. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 TYP (0.018) 1.15 (0.045) 0.10 (0.004) MAX. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) SYMBOL A b C D E e h L q 1.15 (.045) REF 1.30 (.051) REF 1.30 (.051) 2.60 (.102) 1.+ 2001.04.26, 9:18 AMPage 11 "EPCF1BHF.BLFS+11$
P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE 1.+ 2001.04.26, 9:18 AMPage 12 "EPCF1BHF.BLFS+11$
www.semiconductor.agilent.com Data subject to change. Copyright © 2000 Agilent Technologies, Inc. 5968-7868E (2/00) 1.+ 2001.04.26, 9:18 AMPage 13 "EPCF1BHF.BLFS+11$
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