ATF-13284 HP | Alldatasheet
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PACKARD 1-16 GHz Low Noise Gallium Arsenide FET . Features 84 Plastic Package * Low Noise Figure: 0.7 dB typical at 4 GHz « High Associated Gain: 15.0 GB typical at 4 GHz ast goa —=} — * High Output Power: 18.0 dBm typical P: ve f] at 4 GHz * Low Costi GATE © Tape-andt a = = . J Description ae The ATF-13284 is a high performance gallium arsenide baad appropriate rad inthe bret cr sont elagoe of low nile a Pl amplitiers operating in the 1-16 GHz frequency range. .msess = 4 This GaAs FET device has a nominal 0.3 micron gate length ome — —F Wat) a total gale periphery of 250 microns. Proven gokd cas, | based systems and nitride passivation assure ost e215 20.010) a rugged, reliable device. (a.020) GIMENSIONS ARE IM MLLIMETERS (CHES) OPTIMUM WORSE FIGURE AND ASSOCIATED GAH Tas aC, Yon oA5', fos oR A se vy as Noise Parameters: Vos = 2.5 V, los = 20 mA = Stet, [elses oe ee i ee Prewne, ane pro | 16 | si -10 [or | Electrical Specifications, Ta = 25°C [_Symbot_| Parameters and Test Conditions | nits | tin, | typ, | ax _| Optimum Noise Figure: {= 4.0 GHz 4B 07 Vos « 25 V, IDs = 15 - 30 mA {= 12.0 GHz a8 16 Gain @ NFo: Vos = 2.5 V, Ins = 15-30 mA to40aite 2 150 ea eed le Gis 108 Compressed Gain: Vos = 4 V, log = 40 mA 1m4.0GHz C2) 15.0 ' | gm | Transconductance: Vos=25V,vas=ov | smh | 5s | ss | | toss | Saturated Drain Current: Vog=25V.vos-ov | mA | go | soo Note: 1. Refer to PACKAGING section "Tape-and-Riee! Packaging lor Surtace Mount Semiconductors”. 7-26
ATF-13284, 1-16 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings |__reonew | symoot | sin] | Pruner Odrng rman Drain-Source Votage Vos 35V [Partnumber [devices Peres! | resisize_| Gate-Source Voltage Ves -4V ATF-13284-TR1 1000 ia Drain Current los loss ATF-19284-TR2 4000 cra Total Power Dissipation®> Pr 225 mw ATF-13284-STR_ 1 sing Channel Temperature Tou 175°C For more information, see "Tape and Reel Packaging : Storage Temperature Tst¢__| -65°C to +150°C for Semiconductor Devices”, page 14-14. Thermal Resistance: Qe = 325°CW; TcH = 150°C Liquid Crystal Measurment: 1 um Spot Size Typical P Tae25°C Notes: 'ypical Performance, Ta = 25° 1. Operation of this device above any one of these parameters {unless otherwise noted) may cause permanent damage. 2. Case Temperature = 25°C. 8. Derate at 8.1 mW/C for Tc > 102°C. 4. The small spot size of this technique results in a higher, though more aceurate detemination o ge than do atrnate methods. See MEASUREMENTS section for more information. INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN 'AND MAXIMUM STABLE GAIN vs. FREQUENCY. Vos =25V, tos = 29 mA oe ee emt TT tit ee ee 3. - a a ff ss? [Pe : " re ee 20 40 6080 100 120 160 Frequency, Giz Typical Scattering Parameters: Common Source, Zo = 50 Q Ta = 25°C, Vos = 2.5 V, Ins = 20 mA Freq. Su Sa Si Sx GHz Mag Ang eB Mag ‘Ang 08 Mag Ang Mag Ang 05 99 at 102 322 169 36.5 015 80 50 “1 1.0 98 21 102 3.24 157 32.8 023 74 50 -17 20 97 33 103 3.26 145 26.9 045 67 50 -24 3.0 91 2 104 3.30 127 23.2 069 55 49 -37 40 84 73 105 3.96 108 20.7 092 42 47 -50 5.0 7 1 102 3.23 91 ~193 108 31 46 61 6.0 70-108 98 3.08 76 183 421 22 45 71 70 64-128 93 2.93 62 7176 132 14 43 -73 8.0 59-142 94 2.85 a7 -16.9 153 5 39 -89 90 54-166 88 274 30 163 153 +5 33 104 10.0 St 168 83 2.59 14 -16.0 159 -15 25 123 11.0 51 147 74 2.94 -2 16.2 155 22 19 -151 120 48 127 70 2.25 12 160 159 -30 14 a7 13.0 St 108 67 217 26 -15.9 161 -35 12 WT 14.0 S7 87 61 2.02 41 -160 160 46 12 144 15.0 59 70 56 1.90 7 16.1 158 53 15 102 16.0 62 58 51 1.79 ~66 16.1 187 58 21 74 170 63 46 46 1.69 80 16.1 157 67 28 60 18.0 64 35. 37 1.53 93 16.1 157 =84 36 47 7-27