ATF-551M4 HP | Alldatasheet

Document overview

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Technical content

Features

  • Very low noise figure and high linearity
  • Single Supply Enhancement Mode Technology[1] optimized for 3V operation
  • Excellent uniformity in product specifications
  • 400 micron gate width
  • Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
  • Tape-and-reel packaging option available Specifications
  • 2 GHz; 2.7V, 10 mA (typ.)
  • 24.1 dBm output 3 rd order intercept
  • 14.6 dBm output power at 1 dB gain compression
  • 0.5 dB noise figure
  • 17.5 dB associated gain

Applications

  • Low Noise Amplifier for: – Cellular/PCS/WCDMA hand- sets and modem cards – 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure – 2.4 GHz 802.11b Wireless LAN – 5 GHz 802.11a and HIPERLAN Wireless LAN General purpose discrete E-pHEMT for other ultra low noise applications MiniPak 1.4 mm x 1.2 mm Package Pin Connections and Package Marking Note: T op View. Package marking provides orientation, product identification and date code. “V” = Device T ype Code “x” = Date code character. A different character is assigned for each month and year. Source Pin 3 Gate Pin 2 Source Pin 1 Drain Pin 4 Vx Vx

Symbol Parameter and T est Condition Units Min. Typ. Max.

  1. Measurements obtained using production test board described in Figure 5. T ypical values were determined from a sample size of 398 parts from

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This ci rcuit represents a embedded from actual measurements. Symbol Parameter and T est Condition Units Min. Typ. Max.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stu b tuner at the

output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 26. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 27. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 28. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 29. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 30. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 31. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 32. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 33. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 34. MSG/MAG and |S21|2 vs.

  1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 35. MSG/MAG and |S21|2 vs.

  1. The reference plane can be

of both the gate and drain pads. Figure 36. Position of the Reference Planes. ments, a true Fmin is calculated.

900 MHz, when air wound coils

noise figure of nearly 0.65 dB.

VDD is the power supply voltage. ds is the desired drain current. a bipolar junction transistor. Figure 2. Typical ATF-551M4 LNA with Active raised by 0.7 volts at the emitter. supply for the drain current. consumed by the bias network. circuit’s operation are as follows. to 500 µA at P1dB drive levels.

limit gate current to a safe level. Figure 3. PCB Pad Print for Minipak 1412. Technologies sales representative.

MiniPak Package Outline Drawing

Ordering Information

Part Number No. of Devices Container ATF-551M4-TR1 3000 7” Reel ATF-551M4-TR2 10,000 13” Reel ATF-551M4-BLK 100 antistatic bag 1.44 (0.058) 1.40 (0.056) Top view Side view Dimensions are in millimeteres (inches) Bottom view 1.20 (0.048) 1.16 (0.046) 0.70 (0.028) 0.58 (0.023) 1.12 (0.045) 1.08 (0.043) 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) -0.07 (-0.003) -0.03 (-0.001) 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.42 (0.017) 0.38 (0.015) 0.92 (0.037) 0.88 (0.035) 1.32 (0.053) 1.28 (0.051) 0.00 Vx Solder Pad Dimensions

For product information and a complete list of Agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors E-mail: SemiconductorSupport@agilent.com Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5988-4455EN July 16, 2004 5988-9006EN USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW Note: Vx represents Package Marking Code. Device orientation is indicated by package marking. Vx Vx Vx Vx P F W C D E 5° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 1.40 ± 0.05 1.53 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 CAVITY DIAMETER PITCH POSITION D P E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 - 0.004 0.010 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.213 ± 0.004 0.0024 ± 0.00004 COVER TAPE Device Orientation for Outline 4T, MiniPak 1412 T ape Dimensions