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Document overview
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- PDF pages: 24
Technical content
Features
Very low noise fi gure and high linearity Single Supply Enhancement Mode Technology [1] optimized for 3V operation Excellent uniformity in product specifi cations 400 micron gate width Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm Tape-and-reel packaging option available Specifi cations 2 GHz; 2.7V, 10 mA (typ.) 24.1 dBm output 3 rd order intercept 14.6 dBm output power at 1 dB gain compression 0.5 dB noise fi gure 17.5 dB associated gain
Applications
Low Noise Amplifi er for: – Cellular/PCS/WCDMA handsets and modem cards – 2.4 GHz, 3.5 GHz and UNII fi xed wireless infrastructure – 2.4 GHz 802.11b Wireless LAN – 5 GHz 802.11a and HIPERLAN Wireless LAN General purpose discrete E-pHEMT for other ultra low noise applications MiniPak 1.4 mm x 1.2 mm Package Pin Connections and Package Marking Note: Top View. Package marking provides orientation, product identifi ca- tion and date code. “V” = Device Type Code “x” = Date code character. A diff erent character is assigned for each month and year. Source Pin 3 Gate Pin 2 Source Pin 1 Drain Pin 4 Vx Vx
Symbol Parameter and Test Condition Units Min. Typ. Max.
- Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade- Symbol Parameter and Test Condition Units Min. Typ. Max.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double st ub tuner at
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
50 Output
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 26. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 27. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 28. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 29. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 30. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 31. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 32. MSG/MAG and |S21|2 vs.
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA Freq. S 11 S 21 S 12 S 22 MSG/MAG Freq F min opt opt Rn/50 Ga GHz dB Mag. Ang. dB Notes: 1. The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. Typical Noise Parameters, VDS = 3V, IDS = 15 mA
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 34. MSG/MAG and |S21|2 vs.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad. Figure 35. MSG/MAG and |S21|2 vs.
based on the following equation. impedance actually presented to the device. Figure 36. Position of the Reference Planes.
amount of quiescent drain current Id. device threshold voltage, will drain current start to fl ow. diff erential between the gate and source terminals. device is driven to P1dB or Psat. available power supply voltage. Figure 37. Typical ATF-551M4 LNA with Passive Biasing. for a nominal drain current of 10 mA. cation notes covering specifi c designs and applications.
VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current. PHEMT is that a negative power source is not required. at the base of Q2 is raised by 0.7 volts at the emitter. Figure 38. Typical ATF-551M4 LNA with Active Biasing.
G Num=1 C C=0.28 pF Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.147 nH R=0.001 C C=0.046 pF L L=0.234 nH R=0.001MSub TLINP TL3 Z=Z2 Ohm L=23.6 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=11 mil K=K A=0.000 F=1 GHz TanD=0.001 VAR VAR1 K=5 Z2=85 Z1=30 Var Egn TLINP TL1 Z=Z2/2 Ohm L=22 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.2 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=27.5 mil K=K A=0.000 F=1 GHz TanD=0.001 L L=0.234 nH R=0.001 L L=0.281 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear MSUB MSub2 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil ATF-551M4 Minipak Model NFET=yes PFET=no Vto=0.3 Beta=0.444 Lambda=72e-3 Alpha=13 Tau= Tnom=16.85 Idstc= Ucrit=-0.72 Vgexp=1.91 Gamds=1e-4 Vtotc= Betatce= Rgs=0.5 Ohm Rf= Gscap=2 Cgs=0.6193 pF Cgd=0.1435 pF Gdcap=2 Fc=0.65 Rgd=0.5 Ohm Rd=2.025 Ohm Rg=1.7 Ohm Rs=0.675 Ohm Ld= Lg=0.094 nH Ls= Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= Advanced_Curtice2_Model MESFETM1 R7 is chosen to be 1 kΩ. This resistor keeps a small amount of current fl owing through Q2 to help maintain bias stability. R6 is chosen to be 10 KΩ. This value of re- sistance is high enough to limit Q1 gate current in the presence of high RF drive levels as experienced when Q1 is driven to the P1dB gain compression point. C7 provides a low frequency bypass to keep noise from Q2 eff ecting the operation of Q1. C7 is typically 0.1 μF. Maximum Suggested Gate Current The maximum suggested gate current for the ATF-551M4 is 1 mA. Incorporating resistor R5 in the passive bias network or resistor R6 in the active bias network safely limits gate current to 500 μA at P1dB drive levels. In order to minimize component count in the passive biased amplifi er circuit, the 3 resistor bias circuit consisting of R1, R2, and R5 can be simplifi ed if desired. R5 can be removed if R1 is replaced with a 5.6KΩ resistor and if R2 is replaced with a 27KΩ resistor. This combination should limit gate current to a safe level.
P F W C D E 5 MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5 MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 1.40 0.05 1.53 0.05 0.80 0.05 4.00 0.10 0.80 0.05 0.055 0.002 0.064 0.002 0.031 0.002 0.157 0.004 0.031 0.002 CAVITY DIAMETER PITCH POSITION D P E 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 PERFORATION WIDTH THICKNESS W t 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 - 0.004 0.010 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 0.10 0.062 0.001 0.213 0.004 0.0024 0.00004 COVER TAPE Device Orientation for Outline 4T, MiniPak 1412 Tape Dimensions USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW Note: Vx represents Package Marking Code. Device orientation is indicated by package marking. Vx Vx Vx Vx
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