ATF-55143-BLK

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Agilent A TF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet

Description

Agilent Technologies’s ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

Features

• High linearity performance
• Single Supply Enhancement Mode T echnology [1]
• Very low noise figure
• Excellent uniformity in product specifications
• 400 micron gate width
• Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
• Tape-and-Reel packaging option available Specifications 2 GHz; 2.7V, 10 mA (Typ.)
• 24.2 dBm output 3 rd order intercept
• 14.4 dBm output power at 1 dB gain compression
• 0.6 dB noise figure
• 17.7 dB associated gain

Applications

• Low noise amplifier for cellular/ PCS handsets
• LNA for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive V gs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Surface Mount Package SOT -343 Pin Connections and Package Marking SOURCE DRAIN GATE SOURCE 5Fx Note: T op View . Package marking provides orientation and identification “5F” = Device Code “x” = Date code character identifies month of manufacture.

Symbol Parameter and Test Condition Units Min. T yp. [2] Max.

1. Measurements obtained using production test board described in Figure 5.
2. T ypical values determined from a sample size of 500 parts from 6 wafers.

50 Ohm

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit have been de-embedded from actual measurements.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 26. MSG/MAG and |S 21| 2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 27. MSG/MAG and |S 21| 2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 28. MSG/MAG and |S21|2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 29. MSG/MAG and |S 21| 2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 30. MSG/MAG and |S 21| 2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 31. MSG/MAG and |S 21| 2 vs.

1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of

16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate

within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 32. MSG/MAG and |S 21| 2 vs.

covering specific applications). Figure 1. T ypical ATF-55143 LNA with Passive improves low frequency stability. VDD is the power supply voltage. Ids is the desired drain current. source for normal operation. typical bipolar junction transistor.

Figure 2. T ypical ATF-55143 LNA with base of a PNP transistor at Q2. junction of resistors R1 and R2. a bipolar junction transistor. supply for the drain current.

NFET=yes PFET=no Vto=0.3 Beta=0.444 Lambda=72e-3 Alpha=13 Tau= Tnom=16.85 Idstc= Ucrit=-0.72 Vgexp=1.91 Gamds=1e-4 Vtotc= Betatce= Rgs=0.5 Ohm Rf= Gscap=2 Cgs=0.6193 pF Cgd=0.1435 pF Gdcap=2 Fc=0.65 Rgd=0.5 Ohm Rd=2.025 Ohm Rg=1.7 Ohm Rs=0.675 Ohm Ld= Lg=0.094 nH Ls= Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= Advanced_Curtice2_Model MESFETM1 GATE SOURCE Port G Num=1 C C=0.143 pF Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.205 nH R=0.001 C C=0.115 pF L L=0.778 nH R=0.001MSub TLINP TL4 Z=Z1 Ohm L=15 mil K=1 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 TLINP TL3 Z=Z2 Ohm L=25 mil K=K TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K VAR VAR1 K=5 Z2=85 Z1=30 Var Egn TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 L L=0.621 nH R=0.001 L L=0.238 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil

Figure 3. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

Noise Parameter Applications Information F min values at 2 GHz and higher are based on measurements while t he F mins below 2 GHz ha ve been extrapolated. The F min values are based on a set of 16 noise figure measurements F min is calculated. Fmin repre- sents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50W , to an impedance represented by the reflection coefficient G o. The designer must design a matching network that will present G o to the device with minimal associ- ated circuit losses. The noise figure of the completed amplifier is equal to the noise f igure of the device plus the losses of the matching netw ork preceding the device. The noise figure of the device is equal to F min only when the device is presented with Go. If the ref lection coefficient of the Go, then the noise figure of the device will be g reater than F min based on t he following equation. NF = Fmin + 4 Rn |Gs – Go | 2 Where Rn/Zo is the normalized noise resistance, Go is the opti- mum reflection coefficient required to produce F min and Gs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. G o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower G o as compared to narrower gate width devices. Typically for FETs, the higher Go usually infers that an impedance much higher than 50W is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Match- ing to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using multi- layer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB F min of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in Agilent Technologies Application 1085. made at 16 different impedances using an ATN NP5 test system. From these measurements, a true matching network is other than

E D A A1b TYP e 1.30 (0.051) BSC 1.15 (.045) BSC q h C TYPL DIMENSIONS ARE IN MILLIMETERS (INCHES) DIMENSIONS MIN. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 TYP (0.018) 1.15 (0.045) 0.10 (0.004) MAX. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) SYMBOL A b C D E e h L q 1.15 (.045) REF 1.30 (.051) REF 1.30 (.051) 2.60 (.102) Package Dimensions Outline 43 SOT -343 (SC70 4-lead)

Ordering Information

Part Number No. of Devices Container ATF-55143-TR1 3000 7” Reel ATF-55143-TR2 10000 13” Reel ATF-55143-BLK 100 antistatic bag

www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5988-3190EN July 18, 2001 5988-3587EN USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE Device Orientation T ape Dimensions For Outline 4T

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