ATF-52189-BLK | DigiCamel IC Datasheet

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ATF-53189 HP | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 14

Technical content

Features

Single voltage operation
High Linearity and Gain
Low Noise Figure
Excellent uniformity in product specifications
SOT 89 standard package
Point MTTF > 300 years [2]
MSL-1 and lead-free
Tape-and-Reel packaging option available Specifications 2 GHz, 4.0V, 135 mA (Typ.)
40.0 dBm Output IP3
23.0 dBm Output Power at 1dB gain compression
0.85 dB Noise Figure
15.5 dB Gain
46% PAE at P1dB
LFOM [3] 12.7 dB

Applications

Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/ RLL and MMDS applications
General purpose discrete E-pHEMT for other high linearity applications Pin Connections and Package MarkingNotes: Package marking provides orientation and identification: “3G” = Device Code “x” = Month code indicates the month of manufacture. D = Drain S = Source G = Gate Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.

Description

Agilent Technologies’s ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested. 3GX Bottom View DS S G Top View GS S D

Symbol Parameter Units Maximum Vds Drain–Source Voltage[2] V7 Vgs Gate–Source Voltage[2] V -5 to 1.0 Vgd Gate Drain Voltage[2] V -5 to 1.0 Ids Drain Current[2] mA 300 Igs Gate Current mA 20 Pdiss T otal Power Dissipation[3] W 1.0 Pin max. RF Input Power dBm +24 Tch Channel T emperature °C 150 Tstg Storage T emperature °C -65 to 150 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature T B is 25°C. Derate 14.30 mW/°C for TB > 80°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.0V, Ids = 135 mA V — 0.65 — Vth Threshold Voltage Vds = 4.0V, Ids = 8 mA V — 0.30 — Ids Drain to Source Current Vds = 4.0V, Vgs = 0V µA — 3.70 — Gm T ransconductance Vds = 4.0V, Gm = ∆Ids/∆Vgs; mmho — 650 — ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -10.0 -0.34 — NF Noise Figure f = 2 GHz dB — 0.85 — f = 900 MHz dB — 0.80 — G Gain [1] f = 2 GHz dB 14.0 15.5 17.0 f = 900 MHz dB — 17.2 — OIP3 Output 3 rd Order Intercept Point[1] f = 2 GHz dBm 36.0 40.0 — f = 900 MHz dBm — 42.0 — P1dB Output 1dB Compressed [1] f = 2 GHz dBm — 23.0 — f = 900 MHz dBm — 21.7 — PAE Power Added Efficiency f = 2 GHz % — 46.0 — f = 900 MHz % — 33.8 — ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — -54.0 — Power Ratio[1,2] Offset BW = 10 MHz dBc — -64.0 — Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - T est Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz Thermal Resistance[2,4] θch-b = 70°C/W

Typical describes additional product performance information that is not covered by the product warranty.

Figure 6. Typical IV Curve.

F min values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have