ATF-511P8 HP | Alldatasheet

Document overview

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Technical content

Features

  • Single voltage operation
  • High linearity and P1dB
  • Low noise figure
  • Excellent uniformity in product specifications
  • Small package size: 2.0 x 2.0 x 0.75 mm
  • Point MTTF > 300 years [2]
  • MSL-1 and lead-free
  • Tape-and-reel packaging option available Specifications 2 GHz; 4.5V, 200 mA (Typ.)
  • 41.7 dBm output IP3
  • 30 dBm output power at 1 dB gain compression
  • 1.4 dB noise figure
  • 14.8 dB gain
  • 12.1 dB LFOM[4]
  • 69% PAE

Applications

  • Front-end LNA Q2 and Q3 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure
  • Driver amplifier for WLAN, WLL/RLL and MMDS applications
  • General purpose discrete E-pHEMT for other high linearity applications Pin Connections and Package MarkingNote: Package marking provides orientation and identification: “1P” = Device Code “x” = Date code indicates the month of manufacture.Note: 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Pin 8 Pin 7 (Drain) Pin 6 Pin 5 1Px Top View Pin 8 Source (Thermal/RF Gnd) Pin 7 (Drain) Pin 6 Pin 5 Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Bottom View

TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Parameter and T est Condition Units Min. Typ. Max.

  1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
  2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.

II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.

  1. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute max imum ratings and

application note for more details.

50 Ohm

Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.

Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.

110 Ohm

15 Ohm

decrease depending on amount of RF drive. Figure 8. OIP3 vs. IDS and VDS at 2 GHz.

3 V IDS (mA)

Figure 9. OIP3 vs. IDS and VDS at 900 MHz.

3 V Idq (mA)

Figure 10. P1dB vs. Idq and VDS at 2 GHz. Figure 11. P1dB vs. Idq and VDS at 900 MHz. Figure 12. Gain vs. IDS and VDS at 2 GHz. Figure 13. Gain vs. IDS and VDS at 900 MHz. Figure 14. PAE vs. Idq and VDS at 2 GHz. Figure 15. PAE vs. Idq and VDS at 900 MHz.

3 V FREQUENCY (GHz)

Figure 16. OIP3 vs. Temp and Freq.OIP3 (dBm)

decrease depending on amount of RF drive. Figure 17. P1dB vs. Temp and Freq.P1dB (dBm) Figure 18. Gain vs. Temp and Freq.GAIN (dB) Figure 19. PAE vs. Temp and Freq.PAE (%) Figure 20. OIP3 vs. IDS and VDS at 2 GHz. Figure 21. OIP3 vs. IDS and VDS at 900 MHz.

3 V Idq(mA)

Figure 22. P1dB vs. Idq and VDS at 2 GHz. Figure 23. P1dB vs. Idq and VDS at 900 MHz. Figure 24. Gain vs. IDS and VDS at 2 GHz. Figure 25. Gain vs. IDS and VDS at 900 MHz.

decrease depending on amount of RF drive. Figure 26. PAE vs. Idq and VDS at 2 GHz. Figure 27. PAE vs. Idq and VDS at 900 MHz. Figure 28. OIP3 vs. Temp and Freq.OIP3 (dBm) Figure 29. P1dB vs. Temp and Freq.P1dB (dBm) Figure 30. Gain vs. Temp and Freq.GAIN (dB) Figure 31. PAE vs. Temp and Freq.PAE (%)

  1. S parameter is measured on a microstrip line

Figure 32. MSG/MAG & |S21|2

Figure 33. MSG/MAG & |S21|2

  1. S parameter is measured on a microstrip line

Figure 34. MSG/MAG & |S21|2

  1. S parameter is measured on a microstrip line

Figure 35. MSG/MAG & |S21|2

  1. S parameter is measured on a microstrip line

Figure 36. MSG/MAG & |S21|2

  1. S parameter is measured on a microstrip line

2 x 2 LPCC (JEDEC DFP-N) Package Dimensions

Ordering Information

Part Number No. of Devices Container ATF-511P8-TR1 3000 7 ” Reel ATF-511P8-TR2 10000 13 ”Reel ATF-511P8-BLK 100 antistatic bag Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf D E A P e pin1 R L b DIMENSIONS ARE IN MILLIMETERS DIMENSIONS MIN. 0.70

0.203 REF

0.225 1.9 0.65 1.9 1.45

0.50 BSC

0.20 0.35 NOM. 0.75 0.02 0.25 2.0 0.80 2.0 1.6 0.25 0.40 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45 SYMBOL A b D E e P L pin1 1PX Top View End ViewSide View Bottom View A A1

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) 0.25 (9.84) 0.50 (19.68) 0.28 (10.83) 0.60 (23.62) φ0.20 (7.87) PIN 1 Soldermask RF transmission line 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 1.60 (62.99) 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) 0.32 (12.79) 0.50 (19.68) 0.25 (9.74) 0.63 (24.80) Stencil Layout (top view)PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). 0.72 (28.35) PIN 1 1.54 (60.61) USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL 8 mm 4 mm 1PX1PX1PX1PX

D E A P e pin1 R L b DIMENSIONS ARE IN MILLIMETERS DIMENSIONS MIN. 0.70 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.25 2.0 0.80 2.0 1.6 0.25 0.40 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45 SYMBOL A b D E e P L pin1 1PX Top View End ViewSide View Bottom View A A1

www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2003 Agilent Technologies, Inc. Obsoletes 5988-8246EN (12/02) August 5, 2003 5989-0003EN