ATF-36163 HP | Alldatasheet

Document overview

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Technical content

Features

  • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz
  • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz
  • Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz
  • Low Cost Surface Mount Small Plastic Package
  • Tape-and-Reel Packaging Option Available

Applications

  • 12 GHz DBS Downconverters
  • 4 GHz TVRO Downconverters
  • S or L Band Low Noise Amplifiers Surface Mount Package SOT-363 (SC-70) Additionally, the ATF-36163 has low noise-resistance, which reduces the sensitivity of noise performance to variations in input impedance match. This feature makes the design of broad band low noise amplifiers much easier. The performance of the ATF-36163 makes this device the ideal choice for use in the 2nd or 3rd stage of low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) TV systems, C-band TV Receive Only (TVRO) LNAs, Multichannel Multipoint Distribution Systems (MMDS), X-band Radar detector and other low noise amplifiers operating in the 1.5 –18 GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride passivation assure rugged, reliable devices.

Description

The Hewlett-Packard ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12 GHz and 0.6␣ dB at 4 GHz. Pin Connections and Package Marking DRAIN SOURCE 36SOURCE SOURCE GATE SOURCE Note: Package marking provides orientation and identification. 5965-4747E

Symbol Parameter Units Maximum VDS Drain - Source Voltage V + 3 VGS Gate - Source Voltage V -3 VGD Gate Drain Voltage V -3.5 ID Drain Current mA I dss PT Total Power Dissipation mW 180 Pin max RF Input Power dBm + 1 0 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance: θch-c = 160°C/W Note: 1. Operation of this device above any one of these parameters may cause permanent damage. ATF-36163 Typical Parameters TC = 25°C, ZO = 50 Ω , Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Typ. Fmin Minimum Noise Figure (Γsource = Γopt) f = 4 GHz dB 0.6 f = 12 GHz dB 1.0 Ga Associated Gain f = 4 GHz dB 15.8 f = 12 GHz dB 9.4 Gmax Maximum Available Gain[1] f = 4 GHz dB 17.2 f = 12 GHz dB 10.9 P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5 under the power matched condition f = 12 GHz dBm 5 VGS Gate to Source Voltage for IDS = 15 mA V DS = 2.0 V V -0.2 Note: 1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables. TC = 25°C, ZO = 50 Ω , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure [1] f =12.0 GHz dB 1.2 1.4 [1] G Gain at NF [1] f = 12.0 GHz dB 9 10 gm Transconductance V DS = 1.5 V, VGS = 0 V mS 50 60 Idss Saturated Drain Current V DS = 1.5 V, VGS = 0 V mA 15 25 40 Vp 10% Pinchoff Voltage V DS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15 BVGDO Gate Drain Breakdown Voltage I G = 30 µA V -3.5 Note: 1. Measured in a test circuit tuned for a typical device.

ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω ,VDS =0 V , VGS␣=␣ 0 V Freq. S 11 S21 S12 S22 ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω , VDS = 2.0 V, VGS␣=␣ -1.5 V Freq. S 11 S21 S12 S22

Part Number Ordering Information No. of Part Number Devices Container ATF-36163-TR1 3000 7" Reel ATF-36163-BLK 100 antistatic bag Package Dimensions Outline 63 (SOT-363/SC-70) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 1.30 (0.051) REF. 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.25 (0.010) 0.15 (0.006) 1.00 (0.039) 0.80 (0.031) 0.20 (0.008) 0.10 (0.004) 0.30 (0.012) 0.10 (0.004) 0.30 REF. 10° 0.425 (0.017) TYP. DIMENSIONS ARE IN MILLIMETERS (INCHES)

Tape Dimensions and Product Orientation For Outline 63 Device Orientation USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW 36 36 36 36 P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE