ATF35143 HP | Alldatasheet
Document overview
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- PDF pages: 19
Technical content
Features
- Low Noise Figure
- Excellent Uniformity in Product Specifications
- Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70)
- Tape-and-Reel Packaging Option Available Specifications 1.9 GHz; 2V, 15 mA (Typ.)
- 0.4 dB Noise Figure
- 18 dB Associated Gain
- 11 dBm Output Power at 1␣ dB Gain Compression
- 21 dBm Output 3 rd Order Intercept
Applications
- Low Noise Amplifier for Cellular/PCS Handsets
- LNA for WLAN, WLL/RLL, LEO, and MMDS
- General Purpose Discrete PHEMT for Other Ultra Low Noise Applications Surface Mount Package SOT-343
Description
Agilent’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured perfor- mance, ATF-35143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requir- ing super low noise figure with good intercept in the 450␣ MHz to 10 GHz frequency range. Other PHEMT devices in this family are the ATF-34143 and the ATF-33143. The typical specifica- tions for these devices at 2␣ GHz are shown in the table below: Pin Connections and Package Marking Part No. Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm) ATF-33143 1600 m 4 V, 80 mA 0.5 15.0 33.5 ATF-34143 800 m 4 V, 60 mA 0.5 17.5 31.5 ATF-35143 400 m 2 V, 15 mA 0.4 18.0 21.0 GATE 5PxSOURCE DRAIN SOURCE Note: Top View. Package marking provides orientation and identification. “5P” = Device code “x” = Date code character. A new character is assigned for each month, year. 1.+ 2001.04.26, 9:16 AMPage 1 "EPCF1BHF.BLFS+11$
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure- requirements. Circuit losses have been de-embedded from actual measurements.
50 Ohm
Symbol Parameters and Test Conditions Units Min. Typ. [2] Max.
- Guaranteed at wafer probe level
- Typical value determined from a sample size of 450 parts from 9 wafers.
- 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
- Measurements obtained using production test board described in Figure 5.
- Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure a t 2V
production test board requirements. Circuit losses have been de-embedded from actual measurements. = 4 V and IDSQ␣ =␣ 5␣ mA, Id increases to 30 mA as a P1dB of +15 dBm is approached. Figure 6. OIP3 and P1dB vs. Bias at Figure 7. OIP3 and P1dB vs. Bias at Figure 8. NF and Ga vs. Bias at 2GHz. [1] Figure 9. NF and Ga vs. Bias at Figure 10. P1dB vs. Bias (Active Bias)
4 V IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Figure 18. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 19. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 20. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 21. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 22. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 23. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 24. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 25. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Figure 26. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
Fmin values at 2␣ GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true F min is calculated. Fmin represents the true minimum noise figure of the device when the device is pre- sented with an impedance matching network that trans- forms the source impedance, typically 50W , to an impedance represented by the reflection coefficient G o. The designer must design a matching network that will present G o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to F min only when the device is presented with Go. If the reflec- tion coefficient of the matching network is other than G o, then the noise figure of the device will be greater than F min based on the following equation. NF = Fmin + 4 Rn |Gs – Go | 2 Where Rn/Zo is the normalized noise resistance, Go is the opti- mum reflection coefficient required to produce F min and Gs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. G o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower G o as compared to narrower gate width devices. Typically for FETs, the higher Go usually infers that an impedance much higher than 50W is required for the device to produce F min. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high imped- ance requires very hi-Q compo- nents in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB F min of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in Agilent Application 1085. 1.+ 2001.04.26, 9:16 AMPage 15 "EPCF1BHF.BLFS+11$
L=Lc L=Lb R=Rb L=Lb R=Rb L C C=Ca CC=Cb LOSSYL L=Lb R=Rb L=La *.5 L=Ld L L LOSSYL GATE_IN SOURCE DRAIN_OUT REQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF R=0.1 OH LOSSYL L=La L=Lb R=Rb L LOSSYL L=Lb R=Rb LOSSYL G S D SOURCE ATF-35143 SC-70 4 Lead, High Frequency Model Optimized for 0.1– 6.0 GHz This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Agilent reserves the right to change these models without prior notice. NFETMESFET G MODEL=FET W=400 mm XX D XX S SXX NFET=yes PFET= IDSMOD=3 VTO=–0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7 IDS model DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF Gate model RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc Parasitics GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= EG= Breakdown FNC=01e+6 R=.17 P=.65 C=.2 Noise Model scal factors (W=FET width in microns) EQUATION Cds=0.01 *W/200 EQUATION Beta=0.06 *W/200 EQUATION Rd=200/W EQUATION Rs=.5 *200/W EQUATION Cgs=0.2 *W/200 EQUATION Cgd=0.04 *W/200 EQUATION Lg=0.03 *200/W EQUATION Ld=0.03 *200/W EQUATION Ls=0.01 *200/W EQUATION Rc=500 *200/W * STATZ MESFET MODEL *MODEL = FET ATF-35143 Die Model 1.+ 2001.04.26, 9:16 AMPage 16 "EPCF1BHF.BLFS+11$
Part Number Ordering Information No. of Part Number Devices Container ATF-35143-TR1 3000 7" Reel ATF-35143-TR2 10000 13" Reel ATF-35143-BLK 100 antistatic bag Package Dimensions Outline 43 (SOT-343/SC-70 4 lead) 2.00 – 0.05 1.15
0.60 TYP
DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.01 1.30 – 0.02 1.15 1.25 – 0.02 x.xx REF 2.00 – 0.05
0.30 TYP
0.29 – 0.050 0.13 TYP
0.375 TYP
0.90 – 0.05 0.6° 1.15 (.045) REF 1.30 (.051) REF 1.30 (.051) 2.60 (.102) 1.+ 2001.04.26, 9:16 AMPage 17 "EPCF1BHF.BLFS+11$
P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE 1.+ 2001.04.26, 9:16 AMPage 18 "EPCF1BHF.BLFS+11$
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