ATF-331M4 BOARDCOM | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
Low noise fi gure Excellent uniformity in product specifi cations 1600 micron gate width Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm Tape-and-reel packaging option available Specifi cations 2 GHz; 4 V, 60 mA (Typ.) 0.6 dB noise fi gure 15 dB associated gain 19 dBm output power at 1 dB gain compression 31 dBm output 3 rd order intercept
Applications
Tower mounted amplifi er, low noise amplifi er and driver amplifi er for GSM/TDMA/CDMA base stations LNA for WLAN, WLL/RLL, MMDS and wireless data infrastructures General purpose discrete PHEMT for other ultra low noise applications MiniPak 1.4 mm x 1.2 mm Package Pin Connections and Package Marking Note: Top View. Package marking provides orientation, product identifi cation and date code. “P” = Device Type Code “x” = Date code character. A diff erent character is assigned for each month and year. Px Source Pin 3 Gate Pin 2 Source Pin 1 Drain Pin 4 Px
TA = 25°C, RF parameters measured in a test circuit for a typical device. Symbol Parameter and Test Condition Units Min. Typ. [2] Max.
- Guaranteed at wafer probe level
- Typical values are determined from a sample size of 349 parts from 4 wafers.
- Measurements obtained using production test board described in Figure 5.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements.
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input refere nce plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad. Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V ,
Figure 19. MSG/MAG and |S21|2 vs. Frequency at 3 V ,
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input refere nce plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Figure 20. MSG/MAG and |S21|2 vs. Frequency at 3 V ,
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input refere nce plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 4 V ,
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input refere nce plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Figure 22. MSG/MAG and |S21|2 vs. Frequency at 4 V ,
- The Fmin values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
- S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input refere nce plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
as being at the center of both the gate and drain pads. source leads in a typical amplifi er design. based on the following equation. actually presented to the device. o as compared to narrower gate width devices. device creating an amplifi er noise fi gure of nearly 0.65 dB. Figure 23. Position of the Reference Planes.
NFET=yes PFET=no Vto=0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1=0.2 Delta2= Gscap=3 Cgs=1.764 pF Gdcap=3 Cgd=0.338 pF Rgd= Tqm= Vmax= Fc= Rd=0.125 Rg=1 Rs=0.0625 Ld=0.0034 nH Lg=0.0039 nH Ls=0.0012 nH Cds=0.0776 pF Crf=0.1 Rc=62.5 Gsfwd=1 Gsrev=0 Gdfwd=1 Gdrev=0 Vjr=1 Is=1 nA Ir=1 nA Imax=0.1 Xti= Eg= Vbr= Vtotc= Rin= Taumdl=no Fnc=1 E6 R=0.17 C=0.2 P=0.65 wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= Advanced_Curtice2_Model MESFETM1 GATE SOURCE Port G Num=1 C C=0.28 pF Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.147 nH R=0.001 C C=0.046 pF L L=0.234 nH R=0.001MSub TLINP TL3 Z=Z2 Ohm L=23.6 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=11 mil K=K A=0.000 F=1 GHz TanD=0.001 VAR VAR1 K=5 Z2=85 Z1=30 Var Egn TLINP TL1 Z=Z2/2 Ohm L=22 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.2 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=27.5 mil K=K A=0.000 F=1 GHz TanD=0.001 L L=0.234 nH R=0.001 L L=0.281 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear MSUB MSub2 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil ATF-331M4 Die Model This model can be used as a design tool. It has been tested on ADS for various specifi cations. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements, Broadcom reserves the right to change these models without prior notice.
MiniPak Package Outline Drawing
Ordering Information
Part Number No. of Devices Container ATF-331M4-TR1 3000 7” Reel ATF-331M4-TR2 10000 13” Reel ATF-331M4-BLK 100 antistatic bag 1.47 (0.058) 1.37 (0.054) Top view Side view Dimensions are in millimeteres (inches) 1.23 (0.048) 1.13 (0.044) 0.60 (0.024) 0.50 (0.020) AA Solder Pad Dimensions Bottom view 1.10 (0.043) 1.02 (0.040) 0.79 (0.031) 0.77 (0.030) 0.33 (0.013) 0.23 (0.009) -0.065 (-0.0026) -0.055 (-0.0022) 0.00 -0.065 (-0.0026) -0.055 (-0.0022) 0.45 (0.018) 0.35 (0.014) 0.91 (0.036) 0.89 (0.035) 1.34 (0.053) 1.26 (0.050) 0.00
Note: Px represents Package Marking Code. Device orientation is indicated by package marking. Px Px Px Px Device Orientation for Outline 4T, MiniPak 1412 Tape Dimensions P F W C D E 5° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 1.40 ± 0.05 1.63 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 CAVITY DIAMETER PITCH POSITION D P E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 - 0.004 0.010 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.213 ± 0.004 0.0024 ± 0.00004 COVER TAPE
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