ATF-331M4-BLK

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Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet

Description

Agilent Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. The ATF-331M4’s small size and low profile makes it ideal for the design of hybrid modules and other space-constraint devices. Based on its featured perfor- mance, ATF-331M4 is ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity [1]. The device is also suitable for appli- cations in Wireless LAN, WLL/RLL, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Note: 1. From the same PHEMT FET family, the smaller geometry ATF-34143 may also be considered for the higher gain performance, particularly in the higher frequency band (1.8 GHz and up).

Features

• Low noise figure
• Excellent uniformity in product specifications
• 1600 micron gate width
• Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option available Specifications 2 GHz; 4 V, 60 mA (Typ.)
• 0.6 dB noise figure
• 15 dB associated gain
• 19 dBm output power at 1 dB gain compression
• 31 dBm output 3 rd order intercept

Applications

• Tower mounted amplifier, low noise amplifier and driver amplifier for GSM/TDMA/CDMA base stations
• LNA for WLAN, WLL/RLL, MMDS and wireless data infrastructures General purpose discrete PHEMT for other ultra low noise applications MiniPak 1.4 mm x 1.2 mm Package Pin Connections and Package Marking Note: T op View. Package marking provides orientation, product identification and date code. “P” = Device T ype Code “x” = Date code character. A different character is assigned for each month and year. Px Source Pin 3 Gate Pin 2 Source Pin 1 Drain Pin 4 Px

Symbol Parameter and T est Condition Units Min. T yp. [2] Max.

1. Guaranteed at wafer probe level
2. T ypical values are determined from a sample size of 349 parts from 4 wafers.
3. Measurements obtained using production test board described in Figure 5.

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. Th is circuit de-embedded from actual measurements.

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 18. MSG/MAG and |S21|2 vs.

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 19. MSG/MAG and |S21|2 vs.

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 20. MSG/MAG and |S21|2 vs.

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 21. MSG/MAG and |S21|2 vs.

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test syst em. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

1. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input referen ce plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad. Figure 22. MSG/MAG and |S21|2 vs.

1. The reference plane can be

of both the gate and drain pads. Figure 23. Position of the Reference Planes. ments, a true Fmin is calculated.

900 MHz, when air wound coils

noise figure of nearly 0.65 dB. than those with a greater mass.

NFET=yes PFET=no Vto=0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1=0.2 Delta2= Gscap=3 Cgs=1.764 pF Gdcap=3 Cgd=0.338 pF Rgd= Tqm= Vmax= Fc= Rd=0.125 Rg=1 Rs=0.0625 Ld=0.0034 nH Lg=0.0039 nH Ls=0.0012 nH Cds=0.0776 pF Crf=0.1 Rc=62.5 Gsfwd=1 Gsrev=0 Gdfwd=1 Gdrev=0 Vjr=1 Is=1 nA Ir=1 nA Imax=0.1 Xti= Eg= Vbr= Vtotc= Rin= Taumdl=no Fnc=1 E6 R=0.17 C=0.2 P=0.65 wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= Advanced_Curtice2_Model MESFETM1 GATE SOURCE Port G Num=1 C C=0.28 pF Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.147 nH R=0.001 C C=0.046 pF L L=0.234 nH R=0.001MSub TLINP TL3 Z=Z2 Ohm L=23.6 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=11 mil K=K A=0.000 F=1 GHz TanD=0.001 VAR VAR1 K=5 Z2=85 Z1=30 Var Egn TLINP TL1 Z=Z2/2 Ohm L=22 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.2 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=27.5 mil K=K A=0.000 F=1 GHz TanD=0.001 L L=0.234 nH R=0.001 L L=0.281 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear MSUB MSub2 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil ATF-331M4 Die Model This model can be used as a design tool. It has been tested on ADS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements, Agilent reserves the right to change these models without prior notice.

MiniPak Package Outline Drawing

Ordering Information

Part Number No. of Devices Container ATF-331M4-TR1 3000 7 ” Reel ATF-331M4-TR2 10000 13 ” Reel ATF-331M4-BLK 100 antistatic bag 1.44 (0.058) 1.40 (0.056) Top view Side view Dimensions are in millimeteres (inches) Bottom view 1.20 (0.048) 1.16 (0.046) 0.70 (0.028) 0.58 (0.023) 1.12 (0.045) 1.08 (0.043) 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) -0.07 (-0.003) -0.03 (-0.001) 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.42 (0.017) 0.38 (0.015) 0.92 (0.037) 0.88 (0.035) 1.32 (0.053) 1.28 (0.051) 0.00 Px Solder Pad Dimensions

Note: Px represents Package Marking Code. Device orientation is indicated by package marking. Px Px Px Px Device Orientation for Outline 4T, MiniPak 1412 T ape Dimensions P F W C D 1 D E A 0 5° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 1.40 ± 0.05 1.63 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 CAVITY DIAMETER PITCH POSITION D P E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 - 0.004 0.010 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.213 ± 0.004 0.0024 ± 0.00004 COVER TAPE A 0 B 0

www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 271 2451 India, Australia, New Zealand: (+65) 271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 271 2194 Malaysia, Singapore: (+65) 271 2054 Taiwan: (+65) 271 2654 Data subject to change. Copyright © 2002 Agilent Technologies, Inc. January 30, 2002 5988-4993EN