ATF-26884 HP | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • High Output Power: 18.0␣ dBm Typical P1 dB at 12␣ GHz
  • High Gain: 9.0 dB Typical GSS at 12␣ GHz
  • Low Cost Plastic Package
  • Tape-and-Reel Packaging Option Available [1] housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8703E

Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VDS =3 V , IDS␣=␣ 10 mA Freq. S 11 S21 S12 S22 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VDS =5 V , IDS␣=␣ 30 mA Freq. S 11 S21 S12 S22 A model for this device is available in the DEVICE MODELS section.

84 Plastic Package Dimensions

0.51 (0.020) 0.51 (0.020) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.20 ± 0.050 (0.008 ± 0.002) 2.15 (0.085) 1.52 ± 0.25 (0.060 ± 0.010) 5.46 ± 0.25 (0.215 ± 0.010) SOURCE DRAIN SOURCE GATE 268