ATF-21170 HP | Alldatasheet
Document overview
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Technical content
Features
- Low Noise Figure: 0.9 dB Typical at 4␣ GHz
- High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
- High Output Power: 23.0␣ dBm Typical P1 dB at 4␣ GHz
- Hermetic Gold-Ceramic Microstrip Package Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 0.6 f = 4.0 GHz dB 0.9 1.1 f = 6.0 GHz dB 1.2 GA Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 16.0 f = 4.0 GHz dB 12.0 13.0 f = 6.0 GHz dB 10.0 P1 dB Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 23.0 VDS =5 V, IDS = 80 mA G1 dB 1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA f = 4.0 GHz dB 13.0 gm Transconductance: VDS =3 V, VGS = 0 V mmho 70 120 IDSS Saturated Drain Current: VDS = 3 V, VGS = 0 V m A 80 120 200 VP Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -1.5 -0.8 housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applica- tions in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8718E
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VDS =3 V , IDS␣=␣ 20 mA Freq. S 11 S21 S12 S22 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VDS =5 V , IDS␣=␣ 80 mA Freq. S 11 S21 S12 S22 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions 1 3 SOURCE SOURCE DRAINGATE .020 .508 .070 1.70 .495 – .030 12.57 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .040 1.02 .035 .89 .004 – .002 .10 – .05