ATF-13786 HP | Alldatasheet

Document overview

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Technical content

Features

  • Low Cost Surface Mount Plastic Package
  • High fMAX: 60 GHz Typical
  • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical
  • Output Power at 10 GHz: up to 10 dBm
  • Tape-and-Reel Packaging Option Available

Description

Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7␣ GHz ISM bands. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V DS = 3 V, IDS = 40 mA. Pin Configuration 51 0 2 01 FREQUENCY (GHz) GAIN (dB) S 21 MSG MSG MAG This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

2 SOURCE

(unless noted) Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21|2 Insertion Power Gain f = 10 GHz dB 6.0 P1 dB Power at 1 dB Gain Compression f = 10 GHz dBm 15 16.5 G1 dB 1 dB Compressed Gain f = 10 GHz dB 6.5 7.5 PN Phase Noise (100 kHz offset) [5] f = 10 GHz dBc/Hz -110 gm Transconductance V DS = 3 V, VGS = 0 V mS 25 55 IDSS Saturated Drain Current V DS = 3 V, VGS = 0 V mA 50 70 100 VP Pinchoff Voltage V DS = 3 V, IDS = 1 mA V -2.0 -1.5 -0.5 VBDG Gate - Drain Breakdown Voltage I DG = 0.1 mA V 6.5 7 Notes: 4. Recommended maximum bias conditions for use as an oscillator. 5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance. Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator. Symbol Parameter Units Absolute Maximum [1] VDS Drain-Source Voltage V 4 VGS Gate-Source Voltage V -4 VGD Gate-Drain Voltage V -6 IDS Drain Current mA I DSS PT Power Dissipation[2,3] mW 225 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Notes: 1. Operation of this device above any one of these conditions may cause permanent damage. 2. TCASE = 25oC (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board). 3. Derate at 3.1 mW/ oC for TC␣>␣ 60oC. Thermal Resistance[2]: θjc = 325°C/W

Typical Scattering Parameters, Common Source, ZO = 50 Ω , VDS = 3 V, IDS = 40 mA S11 S21 S12 S22 Frequency 1 0.97 -23 4.80 157 0.03 77 0.46 -13 2 0.88 -46 4.60 135 0.06 66 0.42 -25 3 0.78 -68 4.35 117 0.08 58 0.36 -35 4 0.67 -95 4.02 95 0.11 47 0.28 -48 5 0.57 -125 3.61 75 0.12 37 0.19 -65 6 0.52 -157 3.20 57 0.13 28 0.12 -93 7 0.53 176 2.84 41 0.14 21 0.08 -147 8 0.57 160 2.54 31 0.14 18 0.10 171 9 0.60 143 2.27 16 0.14 12 0.15 148 10 0.63 130 2.04 4 0.15 6 0.19 134 11 0.64 117 1.82 -9 0.14 0 0.25 122 12 0.67 107 1.65 -19 0.14 -4 0.30 113 13 0.72 99 1.55 -29 0.14 -8 0.35 109 14 0.76 97 1.47 -35 0.14 -9 0.39 111 15 0.78 90 1.40 -46 0.14 -14 0.41 108 16 0.77 83 1.32 -58 0.14 -20 0.42 104 17 0.74 77 1.26 -68 0.14 -28 0.43 98 18 0.73 69 1.23 -80 0.14 -36 0.42 93 Part Number Ordering Information Part Number Devices per Reel Reel Size ATF-13786-TR1 1000 7'' ATF-13786-STR 10 strip Please refer to the “Tape-and-Reel Packaging for Surface Mount Semiconductors” data sheet for more detailed information. 85 mil Plastic Surface Mount Package Dimensions 0.51 – 0.13 (0.020 – 0.005) 2.34 – 0.38 (0.092 – 0.015) 2.67 – 0.38 (0.105 – 0.15) 1 3 2.16 – 0.13 (0.085 – 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 1.52 – 0.25 (0.060 – 0.010) 0.66 – 0.013 (0.026 – 0.005) 0.203 – 0.051 (0.006 – 0.002)

0.30 MIN

(0.012 MIN) CL 45° 5° TYP. 8° MAX 0° MIN 137