ATF-10100 HP | Alldatasheet

Document overview

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Technical content

Features

  • Low Noise Figure: 0.5 dB Typical at 4 GHz
  • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA
  • High Associated Gain: 14.0 dB Typical at 4 GHz
  • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz ATF-10100 Chip Outline Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions [1] Units Min. Typ. Max. NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4 f = 4.0 GHz dB 0.55 0.7 f = 6.0 GHz dB 0.8 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 17.0 f = 4.0 GHz dB 12.0 14.0 f = 6.0 GHz dB 12.0 P1 dB Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 21.0 VDS = 4 V, IDS = 70 mA G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 15.0 gm Transconductance: VDS = 2 V, VGS = 0 V mmho 80 140 IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180 VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -3.0 -1.3 -0.8 Note: 1. RF performance is determined by packaging and testing 10 devices per wafer .

Description

The ATF-10100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor DSS GG chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8702E

Typical Scattering Parameters, Common Source, ZO = 50 Ω , TA =2 5°C, VDS =2 V , IDS␣=␣ 25 mA Freq. S 11 S21 S12 S22 Typical Scattering Parameters, Common Source, ZO = 50 Ω , TA =2 5°C, VDS =4 V , IDS␣=␣ 70 mA Freq. S 11 S21 S12 S22

279.4 µm 11 mil 218 µm 8.58 mil218 µm 8.58 mil 32 µm 1.26 mil 163 µm 6.42 mil 218 µm 8.58 mil 304.8 µm 12 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. DSS GG ATF-10100 Chip Dimensions