MW7IC2240NR1 FREESCALE | Alldatasheet
Document overview
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Technical content
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF
Select Documentation/Application Notes - AN1955.
Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
- Part internally matched both on input and output.
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Figure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Figure 4. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Layout
Figure 15. Power Gain versus Output Power
28 V 32 V
Figure 16. Power Gain versus Frequency Figure 17. MTTF versus Junction Temperature is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 14%.
Figure 18. CCDF W-CDMA 3GPP , Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
Channel Bandwidth @ /C00345 MHz Offset.
3.84 MHz
Figure 19. Single-Carrier W-CDMA Spectrum
Figure 20. Series Equivalent Input and Load Impedance
Table 7. Common Source S-Parameters (V DD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25/C0053C, 50 Ohm System)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 PACKAGE DIMENSIONS
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2007 • Initial Release of Data Sheet
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